component
HSS06P03
Public Made by Adomby adom
HUASHUO MOSFETs, SOT-23L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownHSS06P03
HUASHUO · MOSFETs · SOT-23L
HSS06P03 from HUASHUO, in a SOT-23L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V with threshold of -1 to -2 V at ID=-250uA. |
| 2 | S | passive | Source of the P-channel MOSFET; continuous drain current -6 A at TA=25C. |
| 3 | D | passive | Drain of the P-channel MOSFET; drain-source voltage rated -30 V and pulsed drain current -24 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOT-23L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -6 | A | TA=25℃, VGS @ -10V | 1 | ||
| Pulsed Drain Current | IDM | -24 | A | 1 | |||
| Total Power Dissipation | PD | 1.25 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 100 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 80 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 17 | 22 | mΩ | VGS=-10V, ID=-4A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 22 | 27 | mΩ | VGS=-4.5V, ID=-3A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.6 | -2 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -5 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | -6 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
HSS06P03 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23L (KiCad packages3D, STEP)
- 3D model files:
hss06p03-etched.step/hss06p03-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hss06p03.step/hss06p03.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
2d48698fa485f6f6, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).