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HSPHV12-01ETG-C

Public Made by Adom

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HXY MOSFET ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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HSPHV12-01ETG-C

HXY MOSFET · ESD And Surge Protection (TVS/ESD) · DFN1006-2L

HSPHV12-01ETG-C from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1 passive Terminal 1 of the single-line ESD protection diode, which protects one unidirectional data or control line with a 12 V working voltage; the text does not state whether this pin is the anode or cathode.
2 2 passive Terminal 2 of the single-line ESD protection diode, which protects one unidirectional data or control line with a 12 V working voltage; the text does not state whether this pin is the anode or cathode.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN1006-2L
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Peak Pulse Power (tp = 8/20 μs) PPP 150 W tp = 8/20 μs 1
Maximum lead temperature for soldering TL 260 °C during 10s 1
Storage Temperature Range Tstg -55 150 °C 1
Operating Temperature Range Top -55 150 °C 1
Maximum junction temperature Tj 150 °C 1
IEC 61000-4-2 ESD contact discharge 8 kV IEC 61000-4-2 contact discharge 1
IEC 61000-4-2 ESD air discharge 15 kV IEC 61000-4-2 air discharge 1
IEC 61000-4-4 EFT 40 A 1
Reverse Working Voltage VRWM 12 V 2
Reverse Breakdown Voltage VBR 13.3 V IT = 1mA 2
Reverse Leakage Current IR 1000 nA VRWM = 12V 2
Clamping Voltage VC 20 V IRWM = 1A, tp = 8/20μs 2
Clamping Voltage VC 26 V IRWM = 4A, tp = 8/20μs 2
Junction Capacitance CJ 35 pF VR = 0V, f = 1MHz 2

CAD (KiCad official)

  • Symbol: HSPHV12-01ETG-C
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: hsphv12-01etg-c-etched.step / hsphv12-01etg-c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsphv12-01etg-c.step / hsphv12-01etg-c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 85583d49f4c51f4c, retrieved 2026-10-13, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF