component
HSP6117
Public Made by Adomby adom
HUASHUO MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 9d ago |
| viewers | 9d ago |
| hsp6117-etched.glb | 9d ago |
| hsp6117-etched.step | 9d ago |
| hsp6117-hero.glb | 9d ago |
| hsp6117-hero.overlay.json | 9d ago |
| hsp6117.glb | 9d ago |
| hsp6117.kicad_mod | 9d ago |
| hsp6117.kicad_sym | 9d ago |
| hsp6117.lbr | 9d ago |
| hsp6117.step | 9d ago |
| package.json | 9d ago |
| page.json | 9d ago |
| README.md | 9d ago |
HSP6117
HUASHUO · MOSFETs · TO-220
HSP6117 from HUASHUO, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20 V and threshold VGS(th) of -1.0 to -2.5 V. |
| 2 | D | passive | Drain; connects to the tab, with VDS rated -60 V and continuous drain current of -80 A at TC=25℃. |
| 3 | S | passive | Source; main current return of the P-channel MOSFET, with continuous source current of -40 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | -80 | A | -VGS @ -10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | -45 | A | -VGS @ -10V | 1 | ||
| Pulsed Drain Current | IDM | -170 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 330 | mJ | 1 | |||
| Avalanche Current | IAS | 40 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 200 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 0.81 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 14 | mΩ | VGS=-10V, ID=-18A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 17 | mΩ | VGS=-4.5V, ID=-12A | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -1.6 | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=-48V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=-48V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | -40 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
HSP6117 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
hsp6117-etched.step/hsp6117-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsp6117.step/hsp6117.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
58fdc70f03e6673d, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).