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HSP6032A

Public Made by Adom

by adom

HUASHUO MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HSP6032A

HUASHUO · MOSFETs · TO-220

HSP6032A from HUASHUO, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated ±20 V, with VGS(th) of 2 V min to 4.5 V max at ID=250uA.
2 D passive Drain (also connected to the mounting tab); VDS is rated 60 V and continuous drain current is 75 A at TC=25℃.
3 S passive Source; continuous source current of the body diode is 75 A max.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package TO-220
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V , ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 7.1 8.5 mΩ VGS=10V , ID=20A 2
Gate Threshold Voltage VGS(th) 2 2.8 4.5 V VGS=VDS , ID =250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=48V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=48V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Continuous Source Current IS 75 A VG=VD=0V , Force Current 2
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 2
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 75 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 57 A VGS @ 10V 1
Pulsed Drain Current IDM 280 A 1
Single Pulse Avalanche Energy EAS 80 mJ VDD=50V,VGS=10V,L=0.1mH,IAS=40A 1
Avalanche Current IAS 40 A 1
Total Power Dissipation PD@TC=25℃ 89 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 60 ℃/W 1
Thermal Resistance Junction-case RθJC 1.4 ℃/W 1
Gate Resistance Rg 1.2 Ω VDS=0V , VGS=0V , f=1MHz 2
Total Gate Charge (10V) Qg 57 nC VDS=30V , VGS=10V , ID=18A 2
Gate-Source Charge Qgs 8.7 nC VDS=30V , VGS=10V , ID=18A 2
Gate-Drain Charge Qgd 14 nC VDS=30V , VGS=10V , ID=18A 2
Turn-On Delay Time Td(on) 16.2 ns VDD=30V , VGS=10V , RG=3.3, ID=20A 2
Rise Time Tr 41.2 ns VDD=30V , VGS=10V , RG=3.3, ID=20A 2
Turn-Off Delay Time Td(off) 56.4 ns VDD=30V , VGS=10V , RG=3.3, ID=20A 2
Fall Time Tf 16.2 ns VDD=30V , VGS=10V , RG=3.3, ID=20A 2
Input Capacitance Ciss 3307 pF VDS=30V , VGS=0V , f=1MHz 2
Output Capacitance Coss 201 pF VDS=30V , VGS=0V , f=1MHz 2
Reverse Transfer Capacitance Crss 151 pF VDS=30V , VGS=0V , f=1MHz 2
Reverse Recovery Time trr 22 nS IF=20A , dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 72 nC IF=20A , dI/dt=100A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: HSP6032A
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: hsp6032a-etched.step / hsp6032a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsp6032a.step / hsp6032a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 36c9cf752a7175ac, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF