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HSP3119

Public Made by Adom

by adom

HUASHUO MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HSP3119

HUASHUO · MOSFETs · TO-220

HSP3119 from HUASHUO, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of -1.0 to -2.5 V at ID=-250uA.
2 D passive Drain (also connected to the mounting tab); drain-source voltage -30 V, continuous drain current -150 A (package limited) at TC=25℃.
3 S passive Source; continuous source current up to -150 A, body diode forward voltage max -1.2 V at IS=-20A.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ -150 A VGS @ -10V, package limited 1
Continuous Drain Current ID@TC=100℃ -95 A VGS @ -10V 1
Pulsed Drain Current IDM -510 A 1
Single Pulse Avalanche Energy EAS 1050 mJ VDD=-30V,VGS=-10V,L=0.5mH,IAS=-75A 1
Avalanche Current IAS -75 A 1
Total Power Dissipation PD@TC=25℃ 200 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W Steady State 1
Thermal Resistance Junction-case RθJC 0.81 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V , ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 2.7 3 mΩ VGS=-10V , ID=-30A 2
Static Drain-Source On-Resistance RDS(ON) 3.5 4.2 mΩ VGS=-4.5V , ID=-20A 2
Gate Threshold Voltage VGS(th) -1 -1.7 -2.5 V VGS=VDS , ID =-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-30V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS -100 uA VDS=-30V , VGS=0V , TJ=125℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Continuous Source Current IS -150 A VG=VD=0V , Force Current 2
Diode Forward Voltage VSD -1.2 V VGS=0V , IS=-20A , TJ=25℃ 2
Gate resistance Rg 1.8 Ω VDS=0V , VGS=0V , f=1MHz 2
Total Gate Charge (-10V) Qg 210 nC VDS=-15V , VGS=-10V , ID=-20A 2
Gate-Source Charge Qgs 2.2 nC VDS=-15V , VGS=-10V , ID=-20A 2
Gate-Drain Charge Qgd 3.3 nC VDS=-15V , VGS=-10V , ID=-20A 2
Turn-On Delay Time Td(on) 17 ns VDD=-15V , VGS=-10V , RG=3, ID=-10A 2
Rise Time Tr 6 ns VDD=-15V , VGS=-10V , RG=3, ID=-10A 2
Turn-Off Delay Time Td(off) 21 ns VDD=-15V , VGS=-10V , RG=3, ID=-10A 2
Fall Time Tf 39 ns VDD=-15V , VGS=-10V , RG=3, ID=-10A 2
Input Capacitance Ciss 12700 pF VDS=-15V , VGS=0V , f=1MHz 2
Output Capacitance Coss 1380 pF VDS=-15V , VGS=0V , f=1MHz 2
Reverse Transfer Capacitance Crss 1210 pF VDS=-15V , VGS=0V , f=1MHz 2
Reverse Recovery Time trr 37 nS IF=-20A , di/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 30 nC IF=-20A , di/dt=100A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: HSP3119
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: hsp3119-etched.step / hsp3119-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsp3119.step / hsp3119.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 bbbb1d637cb834ef, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF