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HSP120P03

Public Made by Adom

by adom

HUASHUO MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HSP120P03

HUASHUO · MOSFETs · TO-220

HSP120P03 from HUASHUO, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage rated ±20 V with threshold VGS(th) of -1.0 to -2.5 V.
2 D passive Drain, also connected to the mounting tab; VDS rated -30 V and continuous drain current -120 A (package limited).
3 S passive Source; continuous source current rated -120 A.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 3.5 3.9 mΩ VGS=-10V, ID=-20A 2
Static Drain-Source On-Resistance RDS(ON) 5.1 6 mΩ VGS=-4.5V, ID=-20A 2
Gate Threshold Voltage VGS(th) -1 -1.6 -2.5 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS -5 uA VDS=-24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS -120 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 2
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ -120 A VGS @ -10V 1
Continuous Drain Current ID@TC=100℃ -89 A VGS @ -10V 1
Pulsed Drain Current IDM -504 A 1
Single Pulse Avalanche Energy EAS 576 mJ VDD=-15V, VGS=-10V, L=0.5mH, Rg=25R 1
Total Power Dissipation PD@TC=25℃ 200 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W Steady State 1
Thermal Resistance Junction-case RθJC 0.81 ℃/W 1
Total Gate Charge (-10V) Qg 125 nC VDS=-15V, VGS=-10V, ID=-20A 2
Gate-Source Charge Qgs 12 nC VDS=-15V, VGS=-10V, ID=-20A 2
Gate-Drain Charge Qgd 31 nC VDS=-15V, VGS=-10V, ID=-20A 2
Turn-On Delay Time Td(on) 14 ns VDD=-15V, VGS=-10V, RG=3.3, ID=-20A 2
Rise Time Tr 12 ns VDD=-15V, VGS=-10V, RG=3.3, ID=-20A 2
Turn-Off Delay Time Td(off) 66 ns VDD=-15V, VGS=-10V, RG=3.3, ID=-20A 2
Fall Time Tf 35 ns VDD=-15V, VGS=-10V, RG=3.3, ID=-20A 2
Input Capacitance Ciss 7300 pF VDS=-15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 819 pF VDS=-15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 530 pF VDS=-15V, VGS=0V, f=1MHz 2

CAD (KiCad official)

  • Symbol: HSP120P03
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: hsp120p03-etched.step / hsp120p03-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsp120p03.step / hsp120p03.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 7da1fe743c8d46c4, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF