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Ray Publish 0.1.0 3de8173 17d ago

HSM9926

HUASHUO · MOSFETs · SOP-8

HSM9926 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1; drain-source voltage rated 20 V.
2 G1 input Gate of MOSFET 1; gate-source voltage limited to ±12 V, threshold 0.6 to 1.5 V.
3 S2 passive Source of MOSFET 2; drain-source voltage rated 20 V.
4 G2 input Gate of MOSFET 2; gate-source voltage limited to ±12 V, threshold 0.6 to 1.5 V.
5 D2 passive Drain of MOSFET 2; continuous current 6 A at TA=25℃, pulsed 24 A, RDS(ON) max 28 mΩ at VGS=4.5V.
6 D2 passive Drain of MOSFET 2, internally common with pin 5; continuous current 6 A at TA=25℃, pulsed 24 A.
7 D1 passive Drain of MOSFET 1; continuous current 6 A at TA=25℃, pulsed 24 A, RDS(ON) max 28 mΩ at VGS=4.5V.
8 D1 passive Drain of MOSFET 1, internally common with pin 7; continuous current 6 A at TA=25℃, pulsed 24 A.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS 12 V 1
Continuous Drain Current ID 6 A TA=25℃, VGS @ 10V 1
Continuous Drain Current ID 4 A TA=70℃, VGS @ 10V 1
Pulsed Drain Current IDM 24 A 1
Total Power Dissipation PD 1.3 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62.5 ℃/W Surface mounted on 1 inch² FR-4 board with 2OZ copper (note 1) 1
Drain-Source Breakdown Voltage BVDSS 20 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 22 28 mΩ VGS=4.5V, ID=6A 2
Static Drain-Source On-Resistance RDS(ON) 34 44 mΩ VGS=2.5V, ID=5.2A 2
Gate Threshold Voltage VGS(th) 0.6 0.9 1.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=20V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=20V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±12V, VDS=0V 2

CAD (KiCad official)

  • Symbol: HSM9926
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: hsm9926-etched.step / hsm9926-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsm9926.step / hsm9926.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 cd3a8b305e160f9e, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF