component
HSM8P10
Public Made by Adomby adom
HUASHUO MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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HSM8P10
HUASHUO · MOSFETs · SOP-8
HSM8P10 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; the pin-configuration picture shows S on the bottom row (pins 1-3), tied internally with the other source pins. |
| 2 | S | passive | Source of the P-channel MOSFET; the pin-configuration picture shows S on the bottom row (pins 1-3), tied internally with the other source pins. |
| 3 | S | passive | Source of the P-channel MOSFET; the pin-configuration picture shows S on the bottom row (pins 1-3), tied internally with the other source pins. |
| 4 | G | input | Gate of the P-channel MOSFET; VGS is rated ±20 V maximum, with a threshold of -1.2 to -2.5 V. |
| 5 | D | passive | Drain of the P-channel MOSFET; VDS is rated -100 V, with continuous current of -8 A at TC=25℃. |
| 6 | D | passive | Drain of the P-channel MOSFET; VDS is rated -100 V, with continuous current of -8 A at TC=25℃. |
| 7 | D | passive | Drain of the P-channel MOSFET; VDS is rated -100 V, with continuous current of -8 A at TC=25℃. |
| 8 | D | passive | Drain of the P-channel MOSFET; VDS is rated -100 V, with continuous current of -8 A at TC=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -8 | A | TC=25℃, VGS @ -10V | 1 | ||
| Continuous Drain Current | ID | -3.8 | A | TC=70℃, VGS @ -10V | 1 | ||
| Pulsed Drain Current | IDM | -18 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 55 | mJ | VDD=-80V, VGS=-10V, L=0.1mH (footnote 3) | 1 | ||
| Avalanche Current | IAS | 3.1 | A | 1 | |||
| Total Power Dissipation | PD | 3.1 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 61 | ℃/W | Note 1: surface mounted on 1 inch FR-4 board with 2OZ copper | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 17 | ℃/W | Note 1: surface mounted on 1 inch FR-4 board with 2OZ copper | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -100 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 83 | 110 | mΩ | VGS=-10V, ID=-6A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 95 | 120 | mΩ | VGS=-4.5V, ID=-3A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.8 | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | 50 | uA | VDS=-100V, VGS=0V, TJ=25℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | -8 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 | ||
| Pulsed Source Current | ISM | -18 | A | 2 |
CAD (KiCad official)
- Symbol:
HSM8P10 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
hsm8p10-etched.step/hsm8p10-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsm8p10.step/hsm8p10.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
a1ac121214813656, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HSM8P10
**HUASHUO** · MOSFETs · SOP-8
HSM8P10 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; the pin-configuration picture shows S on the bottom row (pins 1-3), tied internally with the other source pins. |
| 2 | S | passive | Source of the P-channel MOSFET; the pin-configuration picture shows S on the bottom row (pins 1-3), tied internally with the other source pins. |
| 3 | S | passive | Source of the P-channel MOSFET; the pin-configuration picture shows S on the bottom row (pins 1-3), tied internally with the other source pins. |
| 4 | G | input | Gate of the P-channel MOSFET; VGS is rated ±20 V maximum, with a threshold of -1.2 to -2.5 V. |
| 5 | D | passive | Drain of the P-channel MOSFET; VDS is rated -100 V, with continuous current of -8 A at TC=25℃. |
| 6 | D | passive | Drain of the P-channel MOSFET; VDS is rated -100 V, with continuous current of -8 A at TC=25℃. |
| 7 | D | passive | Drain of the P-channel MOSFET; VDS is rated -100 V, with continuous current of -8 A at TC=25℃. |
| 8 | D | passive | Drain of the P-channel MOSFET; VDS is rated -100 V, with continuous current of -8 A at TC=25℃. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -100 | | | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | -8 | | | A | TC=25℃, VGS @ -10V | 1 |
| Continuous Drain Current | ID | -3.8 | | | A | TC=70℃, VGS @ -10V | 1 |
| Pulsed Drain Current | IDM | -18 | | | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 55 | mJ | VDD=-80V, VGS=-10V, L=0.1mH (footnote 3) | 1 |
| Avalanche Current | IAS | | | 3.1 | A | | 1 |
| Total Power Dissipation | PD | | | 3.1 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 61 | ℃/W | Note 1: surface mounted on 1 inch FR-4 board with 2OZ copper | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 17 | ℃/W | Note 1: surface mounted on 1 inch FR-4 board with 2OZ copper | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -100 | | | V | VGS=0V, ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 83 | 110 | mΩ | VGS=-10V, ID=-6A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 95 | 120 | mΩ | VGS=-4.5V, ID=-3A | 2 |
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.8 | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | 50 | uA | VDS=-100V, VGS=0V, TJ=25℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Continuous Source Current | IS | | | -8 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
| Pulsed Source Current | ISM | | | -18 | A | | 2 |
## CAD (KiCad official)
- Symbol: `HSM8P10`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `hsm8p10-etched.step` / `hsm8p10-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hsm8p10.step` / `hsm8p10.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HUASHUO datasheet](docs/hsm8p10-datasheet.pdf) (6 pp, sha256 `a1ac121214813656`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hsm8p10-datasheet.pdf)