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HSM6056

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HUASHUO MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HSM6056

HUASHUO · MOSFETs · SOP-8

HSM6056 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, tied with pins 2 and 3; continuous drain current is rated 15 A at TC=25℃.
2 S passive Source of the N-channel MOSFET, tied with pins 1 and 3; continuous drain current is rated 15 A at TC=25℃.
3 S passive Source of the N-channel MOSFET, tied with pins 1 and 2; continuous drain current is rated 15 A at TC=25℃.
4 G input Gate of the N-channel MOSFET, with a gate-source voltage rating of ±20 V and a threshold of 1.2 V min to 2.3 V max.
5 D passive Drain of the N-channel MOSFET, tied with pins 6-8; drain-source voltage is rated 60 V.
6 D passive Drain of the N-channel MOSFET, tied with pins 5, 7 and 8; drain-source voltage is rated 60 V.
7 D passive Drain of the N-channel MOSFET, tied with pins 5, 6 and 8; drain-source voltage is rated 60 V.
8 D passive Drain of the N-channel MOSFET, tied with pins 5-7; drain-source voltage is rated 60 V.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 7.2 8.5 mΩ VGS=10V, ID=15A 2
Static Drain-Source On-Resistance RDS(ON) 11.5 14.5 mΩ VGS=4.5V, ID=10A 2
Gate Threshold Voltage VGS(th) 1.2 1.7 2.3 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=48V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=48V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS 5 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 1 V VGS=0V, IS=A, TJ=25℃ 2
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 15 A TC=25℃ 1
Continuous Drain Current ID 11 A TC=100℃ 1
Pulsed Drain Current IDM 56 A 1
Single Pulse Avalanche Energy EAS 26.5 mJ VDD=25V, VGS=10V, L=0.1mH, IAS=23A 1
Avalanche Current IAS 23 A 1
Total Power Dissipation PD 3.1 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 75 ℃/W Surface mounted on 1 inch FR-4 board with 2OZ copper (footnote 1) 1
Thermal Resistance Junction-Case RθJC 40 ℃/W Footnote 1 1

CAD (KiCad official)

  • Symbol: HSM6056
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: hsm6056-etched.step / hsm6056-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsm6056.step / hsm6056.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 c1434fd63c41aa83, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF