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Ray Publish 0.1.0 392de1f 23d ago

HSM4805

HUASHUO · MOSFETs · SOP-8

HSM4805 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of P-channel MOSFET 1; VDS rating -30 V.
2 G1 input Gate of P-channel MOSFET 1; gate-source voltage max ±25 V.
3 S2 passive Source of P-channel MOSFET 2; VDS rating -30 V.
4 G2 input Gate of P-channel MOSFET 2; gate-source voltage max ±25 V.
5 D2 passive Drain of P-channel MOSFET 2; continuous drain current -9 A at TA=25℃.
6 D2 passive Drain of P-channel MOSFET 2, tied to pin 5; continuous drain current -9 A at TA=25℃.
7 D1 passive Drain of P-channel MOSFET 1, tied to pin 8; continuous drain current -9 A at TA=25℃.
8 D1 passive Drain of P-channel MOSFET 1; continuous drain current -9 A at TA=25℃.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 12 16 mΩ VGS=-10V, ID=-8A 2
Static Drain-Source On-Resistance RDS(ON) 18 28 mΩ VGS=-4.5V, ID=-5A 2
Gate Threshold Voltage VGS(th) -1 -1.6 -2.5 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS -5 uA VDS=-24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS -9 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM -50 A 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 2
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -25 25 V 1
Continuous Drain Current ID@TA=25℃ -9 A -VGS @ -10V 1
Continuous Drain Current ID@TA=70℃ -7 A -VGS @ -10V 1
Pulsed Drain Current IDM -40 A 1
Single Pulse Avalanche Energy EAS 125 mJ 1
Avalanche Current IAS -50 A 1
Total Power Dissipation PD@TA=25℃ 2 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 85 ℃/W 1
Thermal Resistance Junction-Case RθJC 24 ℃/W 1

CAD (KiCad official)

  • Symbol: HSM4805
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: hsm4805-etched.step / hsm4805-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsm4805.step / hsm4805.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 ec736830d0a10346, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF