Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

HSM4435

HUASHUO · MOSFETs · SOP-8

HSM4435 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, connected to the body diode anode side.
2 S passive Source of the P-channel MOSFET, connected to the body diode anode side.
3 S passive Source of the P-channel MOSFET, connected to the body diode anode side.
4 G input Gate of the P-channel MOSFET, with VGS rated ±20 V and threshold VGS(th) of -1.0 to -2.5 V.
5 D passive Drain of the P-channel MOSFET, rated VDS -30 V and continuous ID -9.5 A at TA=25℃.
6 D passive Drain of the P-channel MOSFET, rated VDS -30 V and continuous ID -9.5 A at TA=25℃.
7 D passive Drain of the P-channel MOSFET, rated VDS -30 V and continuous ID -9.5 A at TA=25℃.
8 D passive Drain of the P-channel MOSFET, rated VDS -30 V and continuous ID -9.5 A at TA=25℃.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 18 20 mΩ VGS=-10V, ID=-6A 2
Static Drain-Source On-Resistance RDS(ON) 27 32 mΩ VGS=-4.5V, ID=-4A 2
Gate Threshold Voltage VGS(th) -1 -1.4 -2.5 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS -5 uA VDS=-24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS -9.5 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM -50 A 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 2
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -9.5 A TA=25℃, VGS @ -10V 1
Continuous Drain Current ID -7.6 A TA=70℃, VGS @ -10V 1
Pulsed Drain Current IDM -50 A 1
Single Pulse Avalanche Energy EAS 72.2 mJ 1
Avalanche Current IAS -38 A 1
Total Power Dissipation PD 3.1 W TA=25℃ 1
Total Power Dissipation PD 2 W TA=70℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 75 ℃/W 1
Thermal Resistance Junction-Ambient (t≦10s) RθJA 40 ℃/W t≦10s 1
Thermal Resistance Junction-Case RθJC 24 ℃/W 1

CAD (KiCad official)

  • Symbol: HSM4435
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: hsm4435-etched.step / hsm4435-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsm4435.step / hsm4435.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 1850f20a53effff6, retrieved 2026-10-10, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF