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HSM4313

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HUASHUO MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HSM4313

HUASHUO · MOSFETs · SOP-8

HSM4313 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of P-channel MOSFET 1; VDS rated -40 V, continuous drain current -6.5 A.
2 G1 input Gate of P-channel MOSFET 1; VGS absolute maximum ±20 V, threshold -1.0 to -2.5 V.
3 S2 passive Source of P-channel MOSFET 2; VDS rated -40 V, continuous drain current -6.5 A.
4 G2 input Gate of P-channel MOSFET 2; VGS absolute maximum ±20 V, threshold -1.0 to -2.5 V.
5 D2 passive Drain of P-channel MOSFET 2; VDS rated -40 V, pulsed drain current -15 A.
6 D2 passive Drain of P-channel MOSFET 2, internally common with pin 5; VDS rated -40 V.
7 D1 passive Drain of P-channel MOSFET 1, internally common with pin 8; VDS rated -40 V.
8 D1 passive Drain of P-channel MOSFET 1; VDS rated -40 V, pulsed drain current -15 A.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -40 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -6.5 A TC=25℃, -VGS @ -10V 1
Continuous Drain Current ID -4.7 A TC=100℃, -VGS @ -10V 1
Pulsed Drain Current IDM -15 A 1
Single Pulse Avalanche Energy EAS 36 mJ VDD=-25V, VGS=-10V, L=0.1mH, IAS=-27.2A (footnote 3) 1
Avalanche Current IAS -27.2 A 1
Total Power Dissipation PD 3.1 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 85 ℃/W Surface mounted on 1 inch² FR-4 board, 2OZ copper (note 1) 1
Thermal Resistance Junction-Case RθJC 40 ℃/W Surface mounted on 1 inch² FR-4 board, 2OZ copper (note 1) 1
Drain-Source Breakdown Voltage BVDSS -40 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 45 mΩ VGS=-10V, ID=-6A 2
Static Drain-Source On-Resistance RDS(ON) 75 mΩ VGS=-4.5V, ID=-3A 2
Gate Threshold Voltage VGS(th) -1 -1.8 -2.5 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=-32V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=-32V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS -4 A VG=VD=0V, Force Current (notes 1,5) 2
Diode Forward Voltage VSD -1 V VGS=0V, IS=-1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: HSM4313
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: hsm4313-etched.step / hsm4313-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsm4313.step / hsm4313.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 e3981a3fecbfae4b, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF