component
HSM4113
Public Made by Adomby adom
HUASHUO MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
HSM4113
HUASHUO · MOSFETs · SOP-8
HSM4113 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, one of three source pins (S S S) on the bottom row next to pin 1; source current rated -7.5 A continuous (IS). |
| 2 | S | passive | Source of the P-channel MOSFET, one of three source pins (S S S) on the bottom row; source current rated -7.5 A continuous (IS). |
| 3 | S | passive | Source of the P-channel MOSFET, one of three source pins (S S S) on the bottom row; source current rated -7.5 A continuous (IS). |
| 4 | G | input | Gate of the P-channel MOSFET with a VGS rating of ±20 V and a gate threshold of -1.0 to -2.5 V. |
| 5 | D | passive | Drain of the P-channel MOSFET, one of four drain pins (D D D D) on the top row; VDS rated -40 V and ID -7.5 A at 25°C. |
| 6 | D | passive | Drain of the P-channel MOSFET, one of four drain pins (D D D D) on the top row; VDS rated -40 V and ID -7.5 A at 25°C. |
| 7 | D | passive | Drain of the P-channel MOSFET, one of four drain pins (D D D D) on the top row; VDS rated -40 V and ID -7.5 A at 25°C. |
| 8 | D | passive | Drain of the P-channel MOSFET, one of four drain pins (D D D D) on the top row; VDS rated -40 V and ID -7.5 A at 25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 40 | mΩ | VGS=-10V, ID=-6A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 70 | mΩ | VGS=-4.5V, ID=-3A | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=-32V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=-32V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | -7.5 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | -15 | A | 2 | |||
| Diode Forward Voltage | VSD | -1 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | -40 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | -7.5 | A | -VGS @ -10V, TC=25℃ | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | -5.7 | A | -VGS @ -10V, TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | -15 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 36 | mJ | VDD=-25V, VGS=-10V, L=0.1mH, IAS=-27.2A | 1 | ||
| Avalanche Current | IAS | -27.2 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 3.1 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 85 | ℃/W | Surface mounted on 1 inch FR-4 board with 2OZ copper (datasheet note 1) | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 40 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
HSM4113 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
hsm4113-etched.step/hsm4113-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsm4113.step/hsm4113.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
92f0d7fd48b9b327, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HSM4113
**HUASHUO** · MOSFETs · SOP-8
HSM4113 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, one of three source pins (S S S) on the bottom row next to pin 1; source current rated -7.5 A continuous (IS). |
| 2 | S | passive | Source of the P-channel MOSFET, one of three source pins (S S S) on the bottom row; source current rated -7.5 A continuous (IS). |
| 3 | S | passive | Source of the P-channel MOSFET, one of three source pins (S S S) on the bottom row; source current rated -7.5 A continuous (IS). |
| 4 | G | input | Gate of the P-channel MOSFET with a VGS rating of ±20 V and a gate threshold of -1.0 to -2.5 V. |
| 5 | D | passive | Drain of the P-channel MOSFET, one of four drain pins (D D D D) on the top row; VDS rated -40 V and ID -7.5 A at 25°C. |
| 6 | D | passive | Drain of the P-channel MOSFET, one of four drain pins (D D D D) on the top row; VDS rated -40 V and ID -7.5 A at 25°C. |
| 7 | D | passive | Drain of the P-channel MOSFET, one of four drain pins (D D D D) on the top row; VDS rated -40 V and ID -7.5 A at 25°C. |
| 8 | D | passive | Drain of the P-channel MOSFET, one of four drain pins (D D D D) on the top row; VDS rated -40 V and ID -7.5 A at 25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -40 | | | V | VGS=0V, ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 40 | mΩ | VGS=-10V, ID=-6A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 70 | mΩ | VGS=-4.5V, ID=-3A | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=-32V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | 5 | uA | VDS=-32V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Continuous Source Current | IS | | | -7.5 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM | | | -15 | A | | 2 |
| Diode Forward Voltage | VSD | | | -1 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
| Drain-Source Voltage | VDS | | | -40 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID@TC=25℃ | | | -7.5 | A | -VGS @ -10V, TC=25℃ | 1 |
| Continuous Drain Current | ID@TC=100℃ | | | -5.7 | A | -VGS @ -10V, TC=100℃ | 1 |
| Pulsed Drain Current | IDM | | | -15 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 36 | mJ | VDD=-25V, VGS=-10V, L=0.1mH, IAS=-27.2A | 1 |
| Avalanche Current | IAS | | | -27.2 | A | | 1 |
| Total Power Dissipation | PD@TC=25℃ | | | 3.1 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 85 | ℃/W | Surface mounted on 1 inch FR-4 board with 2OZ copper (datasheet note 1) | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 40 | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `HSM4113`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `hsm4113-etched.step` / `hsm4113-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hsm4113.step` / `hsm4113.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HUASHUO datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757799793559252992) (6 pp, sha256 `92f0d7fd48b9b327`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hsm4113-datasheet.pdf)