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Ray Publish 0.1.0 573f3a3 16d ago

HSM4094

HUASHUO · MOSFETs · SOP-8

HSM4094 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET; the datasheet pin drawing labels pins 1-3 as S, with a continuous source current rating of 24 A.
2 S passive Source of the N-channel MOSFET; the datasheet pin drawing labels pins 1-3 as S, with a continuous source current rating of 24 A.
3 S passive Source of the N-channel MOSFET; the datasheet pin drawing labels pins 1-3 as S, with a continuous source current rating of 24 A.
4 G input Gate of the N-channel MOSFET; the datasheet states a maximum gate-source voltage of ±20 V and a threshold voltage of 1.2 to 2.2 V.
5 D passive Drain of the N-channel MOSFET; the datasheet states a maximum drain-source voltage of 40 V.
6 D passive Drain of the N-channel MOSFET; the datasheet states a maximum drain-source voltage of 40 V.
7 D passive Drain of the N-channel MOSFET; the datasheet states a maximum drain-source voltage of 40 V.
8 D passive Drain of the N-channel MOSFET; the datasheet states a maximum drain-source voltage of 40 V.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 24 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 19 A VGS @ 10V 1
Pulsed Drain Current IDM 70 A 1
Single Pulse Avalanche Energy EAS 80 mJ 1
Total Power Dissipation PD@TA=25℃ 3 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 75 ℃/W 1
Thermal Resistance Junction-Case RθJC 40 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 2.5 3.2 mΩ VGS=10V, ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 3.8 5.3 mΩ VGS=4.5V, ID=15A 2
Gate Threshold Voltage VGS(th) 1.2 1.7 2.2 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=32V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=32V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS 24 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 1 V VGS=0V, IS=1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: HSM4094
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: hsm4094-etched.step / hsm4094-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsm4094.step / hsm4094.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 4d54418db1e5563d, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF