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HSM3303

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HUASHUO MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HSM3303

HUASHUO · MOSFETs · SOP-8

HSM3303 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of P-channel MOSFET 1, with VDS rated -30 V and continuous drain current -6.5 A at TA=25℃.
2 G1 input Gate of P-channel MOSFET 1, with VGS rated ±20 V and gate threshold of -1.0 to -2.5 V.
3 S2 passive Source of P-channel MOSFET 2, with VDS rated -30 V and continuous drain current -6.5 A at TA=25℃.
4 G2 input Gate of P-channel MOSFET 2, with VGS rated ±20 V and gate threshold of -1.0 to -2.5 V.
5 D2 passive Drain of P-channel MOSFET 2, with VDS rated -30 V and pulsed drain current -26 A.
6 D2 passive Drain of P-channel MOSFET 2 (tied to pin 5), with VDS rated -30 V and pulsed drain current -26 A.
7 D1 passive Drain of P-channel MOSFET 1, with VDS rated -30 V and pulsed drain current -26 A.
8 D1 passive Drain of P-channel MOSFET 1 (tied to pin 7), with VDS rated -30 V and pulsed drain current -26 A.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 18 25 mΩ VGS=-10V, ID=-6A 2
Static Drain-Source On-Resistance RDS(ON) 28 42 mΩ VGS=-4.5V, ID=-4A 2
Gate Threshold Voltage VGS(th) -1 -1.4 -2.5 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS -5 uA VDS=-24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Input Capacitance Ciss 807 1345 1883 pF VDS=-15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 117 194 272 pF VDS=-15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 95 158 221 pF VDS=-15V, VGS=0V, f=1MHz 2
Continuous Source Current IS -6.5 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM -26 A 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 2
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TA=25℃ -6.5 A -VGS @ -10V, TA=25℃ 1
Continuous Drain Current ID@TA=70℃ -5.2 A -VGS @ -10V, TA=70℃ 1
Pulsed Drain Current IDM -26 A 1
Single Pulse Avalanche Energy EAS 72.2 mJ VDD=-25V, VGS=-10V, L=0.1mH, IAS=-38A 1
Avalanche Current IAS -38 A 1
Total Power Dissipation PD@TA=25℃ 1.5 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 85 ℃/W Surface mounted on 1 inch² FR-4 board, 2OZ copper 1
Thermal Resistance Junction-Case RθJC 25 ℃/W Surface mounted on 1 inch² FR-4 board, 2OZ copper 1

CAD (KiCad official)

  • Symbol: HSM3303
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: hsm3303-etched.step / hsm3303-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsm3303.step / hsm3303.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 f3128d0177bc6cd8, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF