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Contents

README

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HSM3214

HUASHUO · MOSFETs · SOP-8

HSM3214 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1; body diode continuous source current is 9 A max.
2 G1 input Gate of MOSFET 1; absolute maximum VGS is ±20 V, with threshold 1.2 V min to 2.5 V max.
3 S2 passive Source of MOSFET 2; body diode continuous source current is 9 A max.
4 G2 input Gate of MOSFET 2; absolute maximum VGS is ±20 V, with threshold 1.2 V min to 2.5 V max.
5 D2 passive Drain of MOSFET 2; VDS is rated 30 V, with continuous drain current of 10 A at TA=25℃.
6 D2 passive Drain of MOSFET 2, tied to pin 5; VDS is rated 30 V, with continuous drain current of 10 A at TA=25℃.
7 D1 passive Drain of MOSFET 1; VDS is rated 30 V, with continuous drain current of 10 A at TA=25℃.
8 D1 passive Drain of MOSFET 1, tied to pin 7; VDS is rated 30 V, with continuous drain current of 10 A at TA=25℃.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TA=25℃ 10 A VGS @ 10V 1
Continuous Drain Current ID@TA=70℃ 8 A VGS @ 10V 1
Pulsed Drain Current IDM 36 A 1
Single Pulse Avalanche Energy EAS 24.2 mJ Note 3: VDD=25V, VGS=10V, L=0.1mH, IAS=22A 1
Avalanche Current IAS 22 A 1
Total Power Dissipation PD@TA=25℃ 1.5 W Note 4: limited by 150℃ junction temperature 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 85 ℃/W Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper 1
Thermal Resistance Junction-Case RθJL 25 ℃/W Note 1 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 12 mΩ VGS=10V, ID=8A 2
Static Drain-Source On-Resistance RDS(ON) 18 mΩ VGS=4.5V, ID=6A 2
Gate Threshold Voltage VGS(th) 1.2 1.6 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Input Capacitance Ciss 760 940 1175 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 92 131 163 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 76 109 153 pF VDS=15V, VGS=0V, f=1MHz 2
Continuous Source Current IS 9 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 1 V VGS=0V, IS=1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: HSM3214
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: hsm3214-etched.step / hsm3214-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsm3214.step / hsm3214.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 01050988f7db0002, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF