component
HSM2202
Public Made by Adomby adom
HUASHUO MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 24d ago |
| viewers | 24d ago |
| hsm2202-etched.glb | 24d ago |
| hsm2202-etched.step | 24d ago |
| hsm2202-hero.glb | 24d ago |
| hsm2202-hero.overlay.json | 24d ago |
| hsm2202.glb | 24d ago |
| hsm2202.kicad_mod | 24d ago |
| hsm2202.kicad_sym | 24d ago |
| hsm2202.lbr | 24d ago |
| hsm2202.step | 24d ago |
| package.json | 24d ago |
| page.json | 24d ago |
| README.md | 24d ago |
HSM2202
HUASHUO · MOSFETs · SOP-8
HSM2202 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1; VDS rating 20 V. |
| 2 | G1 | input | Gate of MOSFET 1; VGS limited to ±12 V, threshold 0.5 to 1.2 V. |
| 3 | S2 | passive | Source of MOSFET 2; VDS rating 20 V. |
| 4 | G2 | input | Gate of MOSFET 2; VGS limited to ±12 V, threshold 0.5 to 1.2 V. |
| 5 | D2 | passive | Drain of MOSFET 2; 8 A continuous at TA=25℃, 32 A pulsed. |
| 6 | D2 | passive | Drain of MOSFET 2, tied to pin 5; 8 A continuous at TA=25℃, 32 A pulsed. |
| 7 | D1 | passive | Drain of MOSFET 1; 8 A continuous at TA=25℃, 32 A pulsed. |
| 8 | D1 | passive | Drain of MOSFET 1, tied to pin 7; 8 A continuous at TA=25℃, 32 A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | Absolute maximum rating | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | Printed as ±12 V | 1 | |
| Continuous Drain Current | ID | 8 | A | TA=25℃, VGS @ 10V | 1 | ||
| Continuous Drain Current | ID | 6 | A | TA=70℃, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 32 | A | Pulsed, footnote 2 | 1 | ||
| Total Power Dissipation | PD | 1.25 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | Storage | 1 | |
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | Operating junction | 1 | |
| Thermal Resistance Junction-ambient | RθJA | 100 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper (note 1) | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 9.5 | 12 | mΩ | VGS=4.5V, ID=8A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 12 | 15 | mΩ | VGS=2.5V, ID=6A | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.7 | 1.2 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=20V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=20V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V, VDS=0V | 2 |
CAD (KiCad official)
- Symbol:
HSM2202 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
hsm2202-etched.step/hsm2202-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsm2202.step/hsm2202.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
8064a4da42c15cce, retrieved 2026-10-13, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).