component
HSM20N02
Public Made by Adomby adom
HUASHUO MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHSM20N02
HUASHUO · MOSFETs · SOP-8
HSM20N02 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal, connected in parallel with pins 2 and 3; continuous drain current is 20 A at TC=25℃. |
| 2 | S | passive | Source terminal, connected in parallel with pins 1 and 3; continuous drain current is 20 A at TC=25℃. |
| 3 | S | passive | Source terminal, connected in parallel with pins 1 and 2; gate-source voltage is rated ±12 V. |
| 4 | G | input | Gate terminal with a gate-source voltage rating of ±12 V and a threshold of 0.5 V min to 1.2 V max at 250 uA. |
| 5 | D | passive | Drain terminal, connected in parallel with pins 6 to 8; drain-source voltage is rated 20 V. |
| 6 | D | passive | Drain terminal, connected in parallel with pins 5, 7 and 8; drain-source voltage is rated 20 V. |
| 7 | D | passive | Drain terminal, connected in parallel with pins 5, 6 and 8; pulsed drain current is rated 140 A. |
| 8 | D | passive | Drain terminal, connected in parallel with pins 5 to 7; pulsed drain current is rated 140 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOP-8 |
| Category | Transistors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 2.9 | 5.5 | mΩ | VGS=4.5V, ID=20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 3.5 | 7 | mΩ | VGS=2.5V, ID=10A | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.75 | 1.2 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=20V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=20V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V, VDS=0V | 2 | |
| Continuous Source Current | IS | 20 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=10A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 20 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=70℃ | 16 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 140 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 160 | mJ | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 3.1 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient (Steady State) | RθJA | 75 | ℃/W | 1 | |||
| Thermal Resistance Junction-Ambient (t ≤10s) | RθJA | 40 | ℃/W | t ≤10s | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 24 | ℃/W | 1 | |||
| VGS(th) Temperature Coefficient | △VGS(th) | -6.16 | mV/℃ | 2 | |||
| Total Gate Charge (4.5V) | Qg | 83 | nC | VDS=10V, VGS=4.5V, ID=10A | 2 | ||
| Gate-Source Charge | Qgs | 5 | nC | VDS=10V, VGS=4.5V, ID=10A | 2 | ||
| Gate-Drain Charge | Qgd | 11 | nC | VDS=10V, VGS=4.5V, ID=10A | 2 | ||
| Turn-On Delay Time | Td(on) | 7 | ns | VDD=10V, VGS=4.5V, RG=3.3, ID=2A | 2 | ||
| Rise Time | Tr | 18 | ns | VDD=10V, VGS=4.5V, RG=3.3, ID=2A | 2 | ||
| Turn-Off Delay Time | Td(off) | 30 | ns | VDD=10V, VGS=4.5V, RG=3.3, ID=2A | 2 | ||
| Fall Time | Tf | 16 | ns | VDD=10V, VGS=4.5V, RG=3.3, ID=2A | 2 | ||
| Input Capacitance | Ciss | 3400 | pF | VDS=10V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 500 | pF | VDS=10V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 80 | pF | VDS=10V, VGS=0V, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
HSM20N02 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
hsm20n02-etched.step/hsm20n02-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsm20n02.step/hsm20n02.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
4a16dbf43d8a50f1, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).