# HSM1564

**HUASHUO** · MOSFETs · SOP-8

HSM1564 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (channel 1 source). |
| 2 | G1 | input | Gate of MOSFET 1, with gate-source voltage limited to ±20 V. |
| 3 | S2 | passive | Source of MOSFET 2 (channel 2 source). |
| 4 | G2 | input | Gate of MOSFET 2, with gate-source voltage limited to ±20 V. |
| 5 | D2 | passive | Drain of MOSFET 2, rated for 60 V drain-source voltage and 8 A continuous current. |
| 6 | D2 | passive | Drain of MOSFET 2, rated for 60 V drain-source voltage and 8 A continuous current. |
| 7 | D1 | passive | Drain of MOSFET 1, rated for 60 V drain-source voltage and 8 A continuous current. |
| 8 | D1 | passive | Drain of MOSFET 1, rated for 60 V drain-source voltage and 8 A continuous current. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 60 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID@TA=25℃ |  |  | 8 | A | VGS @ 10V | 1 |
| Continuous Drain Current | ID@TA=70℃ |  |  | 6 | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM |  |  | 32 | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 150 | mJ |  | 1 |
| Total Power Dissipation | PD@TA=25℃ |  |  | 2 | W |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 75 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 60 |  |  | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 13.5 | 17 | mΩ | VGS=10V, ID=20A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 15.5 | 20 | mΩ | VGS=4.5V, ID=15A | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=60V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 500 | nA | VDS=60V, VGS=0V, TJ=125℃ | 2 |
| Gate-Source Leakage Current | IGSS |  |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Continuous Source Current (Body Diode) | IS |  |  | 9.5 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage | VSD |  |  | 0.99 | V | VGS=0V, IS=20A, TJ=25℃ | 2 |

## CAD (KiCad official)

- Symbol: `HSM1564`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `hsm1564-etched.step` / `hsm1564-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hsm1564.step` / `hsm1564.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HUASHUO datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757802591890100224) (6 pp, sha256 `af0d51ee38f2cd17`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hsm1564-datasheet.pdf)