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HSM0903

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HUASHUO MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HSM0903

HUASHUO · MOSFETs · SOP-8

HSM0903 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1; the datasheet does not state which channel (N or P) is MOSFET 1.
2 G1 input Gate of MOSFET 1, with VGS rated ±20 V for both channels.
3 S2 passive Source of MOSFET 2; the datasheet does not state which channel (N or P) is MOSFET 2.
4 G2 input Gate of MOSFET 2, with VGS rated ±20 V for both channels.
5 D2 passive Drain of MOSFET 2, with VDS rated 100 V (N-channel) or -100 V (P-channel).
6 D2 passive Drain of MOSFET 2, with VDS rated 100 V (N-channel) or -100 V (P-channel); tied to pin 5.
7 D1 passive Drain of MOSFET 1, with VDS rated 100 V (N-channel) or -100 V (P-channel).
8 D1 passive Drain of MOSFET 1, with VDS rated 100 V (N-channel) or -100 V (P-channel); tied to pin 7.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
N-Ch Drain-Source Voltage VDS 100 V 1
P-Ch Drain-Source Voltage VDS -100 V 1
N-Ch Gate-Source Voltage VGS -20 20 V 1
P-Ch Gate-Source Voltage VGS -20 20 V 1
N-Ch Continuous Drain Current ID@TA=25℃ 3 A VGS @ 10V 1
P-Ch Continuous Drain Current ID@TA=25℃ -2.1 A VGS @ 10V 1
N-Ch Continuous Drain Current ID@TA=70℃ 2.4 A VGS @ 10V 1
P-Ch Continuous Drain Current ID@TA=70℃ -1.7 A VGS @ 10V 1
N-Ch Pulsed Drain Current IDM 10 A 1
P-Ch Pulsed Drain Current IDM -10 A 1
N-Ch Single Pulse Avalanche Energy EAS 25 mJ VDD=25V, VGS=10V, L=0.5mH, IAS=10A (note 3) 1
P-Ch Single Pulse Avalanche Energy EAS 49 mJ VDD=-25V, VGS=-10V, L=0.5mH, IAS=-14A (note 3) 1
N-Ch Avalanche Current IAS 10 A 1
P-Ch Avalanche Current IAS -14 A 1
N-Ch Total Power Dissipation PD@TA=25℃ 2.1 W 1
P-Ch Total Power Dissipation PD@TA=25℃ 2.1 W 1
N-Ch Storage Temperature Range TSTG -55 150 ℃ 1
P-Ch Storage Temperature Range TSTG -55 150 ℃ 1
N-Ch Operating Junction Temperature Range TJ -55 150 ℃ 1
P-Ch Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 100 ℃/W Surface mounted on 1 inch FR-4 board, 2OZ copper (note 1) 1
Thermal Resistance Junction-Case RθJC 60 ℃/W Note 1 1
N-Ch Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V, ID=250uA 2
N-Ch Static Drain-Source On-Resistance RDS(ON) 80 100 mΩ VGS=10V, ID=2.5A 2
N-Ch Static Drain-Source On-Resistance RDS(ON) 90 125 mΩ VGS=4.5V, ID=2A 2
N-Ch Gate Threshold Voltage VGS(th) 1.2 2 2.5 V VGS=VDS, ID=250uA 2
N-Ch Drain-Source Leakage Current IDSS 1 uA VDS=80V, VGS=0V, TJ=25℃ 2
N-Ch Drain-Source Leakage Current IDSS 30 uA VDS=80V, VGS=0V, TJ=55℃ 2
N-Ch Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
N-Ch Continuous Source Current IS 2 A VG=VD=0V, Force Current 2
N-Ch Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
P-Ch Drain-Source Breakdown Voltage BVDSS -100 V VGS=0V, ID=-250uA 3
P-Ch Static Drain-Source On-Resistance RDS(ON) 180 220 mΩ VGS=-10V, ID=-2A 3
P-Ch Static Drain-Source On-Resistance RDS(ON) 200 255 mΩ VGS=-4.5V, ID=-1.6A 3
P-Ch Gate Threshold Voltage VGS(th) -1.2 -1.9 -2.5 V VGS=VDS, ID=-250uA 3
P-Ch Drain-Source Leakage Current IDSS 1 uA VDS=-80V, VGS=0V, TJ=25℃ 3
P-Ch Drain-Source Leakage Current IDSS 30 uA VDS=-80V, VGS=0V, TJ=55℃ 3
P-Ch Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 3
P-Ch Continuous Source Current IS -1.5 A VG=VD=0V, Force Current 3
P-Ch Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 3

CAD (KiCad official)

  • Symbol: HSM0903
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: hsm0903-etched.step / hsm0903-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsm0903.step / hsm0903.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (9 pp, sha256 7582779e6a37224b, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF