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Generated by kicad-footprint-generator · KiCad file format 20260206

Name	Last commit message	Last updated
docs	Publish 0.1.0 · Ray	3h ago
viewers	hsm05p15: viewers · Ray	3h ago
hsm05p15-etched.glb	Publish 0.1.0 · Ray	3h ago
hsm05p15-etched.step	hsm05p15: factory component page (tier=lcsc) · Ray	3h ago
hsm05p15-hero.glb	hsm05p15: hero GLB from the etched model (keeps the MPN mark) · Ray	3h ago
hsm05p15-hero.overlay.json	Publish 0.1.0 · Ray	3h ago
hsm05p15.glb	Publish 0.1.0 · Ray	3h ago
hsm05p15.kicad_mod	Publish 0.1.0 · Ray	3h ago
hsm05p15.kicad_sym	Publish 0.1.0 · Ray	3h ago
hsm05p15.lbr	Publish 0.1.0 · Ray	3h ago
hsm05p15.step	Publish 0.1.0 · Ray	3h ago
package.json	Publish 0.1.0 · Ray	3h ago
page.json	Set visibility: public · Ray	3h ago
README.md	Publish 0.1.0 · Ray	3h ago

HSM05P15

HUASHUO · MOSFETs · SOP-8

HSM05P15 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	S	passive	Source of the P-channel MOSFET; the datasheet labels pins 1-3 as S.
2	S	passive	Source of the P-channel MOSFET; the datasheet labels pins 1-3 as S.
3	S	passive	Source of the P-channel MOSFET; the datasheet labels pins 1-3 as S.
4	G	input	Gate of the P-channel MOSFET; the VGS limit is ±20 V.
5	D	passive	Drain of the P-channel MOSFET; the VDS limit is -150 V.
6	D	passive	Drain of the P-channel MOSFET; the VDS limit is -150 V.
7	D	passive	Drain of the P-channel MOSFET; the VDS limit is -150 V.
8	D	passive	Drain of the P-channel MOSFET; the VDS limit is -150 V.

Key specifications

Parameter	Value
Manufacturer	HUASHUO
Package	SOP-8
Category	Transistors/Thyristors
Pins	8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Breakdown Voltage	BVDSS	-150			V	VGS=0V, ID=-250uA	2
Static Drain-Source On-Resistance	RDS(ON)		290	345	mΩ	VGS=-10V, ID=-2A	2
Gate Threshold Voltage	VGS(th)	-2	-2.7	-4	V	VGS=VDS, ID=-250uA	2
Drain-Source Leakage Current	IDSS			-1	uA	VDS=-150V, VGS=0V, TJ=25℃	2
Gate-Source Leakage Current	IGSS	-100		100	nA	VGS=±20V, VDS=0V	2
Continuous Source Current	IS			-5	A	VG=VD=0V, Force Current	2
Diode Forward Voltage	VSD			-1.2	V	VGS=0V, IS=-1A, TJ=25℃	2
Drain-Source Voltage	VDS	-150			V		1
Gate-Source Voltage	VGS	-20		20	V		1
Continuous Drain Current	ID@TC=25℃	-5			A	VGS @ -10V; TC=25℃	1
Continuous Drain Current	ID@TC=100℃	-3			A	VGS @ -10V; TC=100℃	1
Continuous Drain Current	ID@TA=25℃	-2			A	VGS @ -10V; TA=25℃	1
Continuous Drain Current	ID@TA=100℃	-1.4			A	VGS @ -10V; TA=100℃	1
Pulsed Drain Current	IDM	-8			A		1
Single Pulse Avalanche Energy	EAS			73	mJ		1
Total Power Dissipation	PD@TA=25℃			3	W	TA=25℃	1
Storage Temperature Range	TSTG	-55		150	℃		1
Operating Junction Temperature Range	TJ	-55		150	℃		1
Thermal Resistance Junction-Ambient	RθJA			45	℃/W		1
Thermal Resistance Junction-Case	RθJC			30	℃/W		1

CAD (KiCad official)

Symbol: HSM05P15
Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
3D model: SOP-8 (KiCad packages3D, STEP)
3D model files: hsm05p15-etched.step / hsm05p15-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsm05p15.step / hsm05p15.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: HUASHUO datasheet (6 pp, sha256 46e19e36a32ecfbd, retrieved 2026-10-17, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF