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HSM0228

HUASHUO · MOSFETs · SOP-8

HSM0228 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1; body diode continuous source current IS is 2.5 A max.
2 G1 input Gate of MOSFET 1; gate-source voltage rated ±20 V max, threshold 1.2 to 2.5 V.
3 S2 passive Source of MOSFET 2; body diode continuous source current IS is 2.5 A max.
4 G2 input Gate of MOSFET 2; gate-source voltage rated ±20 V max, threshold 1.2 to 2.5 V.
5 D2 passive Drain of MOSFET 2; drain-source voltage 100 V max, continuous drain current 4 A at TA=25℃.
6 D2 passive Drain of MOSFET 2, tied to pin 5; drain-source voltage 100 V max, continuous drain current 4 A at TA=25℃.
7 D1 passive Drain of MOSFET 1; drain-source voltage 100 V max, continuous drain current 4 A at TA=25℃.
8 D1 passive Drain of MOSFET 1, tied to pin 7; drain-source voltage 100 V max, continuous drain current 4 A at TA=25℃.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V , ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 68 mΩ VGS=10V , ID=4A 2
Static Drain-Source On-Resistance RDS(ON) 94 mΩ VGS=4.5V , ID=3A 2
Gate Threshold Voltage VGS(th) 1.2 2.3 2.5 V VGS=VDS , ID =250uA 2
Drain-Source Leakage Current IDSS 10 uA VDS=80V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS 100 uA VDS=80V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Continuous Source Current IS 2.5 A VG=VD=0V , Force Current 2
Pulsed Source Current ISM 25 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 2
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 4 A ID@TA=25℃, VGS @ 10V 1
Continuous Drain Current ID 3 A ID@TA=70℃, VGS @ 10V 1
Pulsed Drain Current IDM 25 A 1
Total Power Dissipation PD 1.5 W PD@TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 90 ℃/W 1
Thermal Resistance Junction-Case RθJC 40 ℃/W 1

CAD (KiCad official)

  • Symbol: HSM0228
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: hsm0228-etched.step / hsm0228-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsm0228.step / hsm0228.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 bfdb752f966e254c, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF