component
HSM0204
Public Made by Adomby adom
HUASHUO MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownHSM0204
HUASHUO · MOSFETs · SOP-8
HSM0204 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1; the datasheet states VDS 100 V and ID 2.5 A at TA=25°C per channel rating. |
| 2 | G1 | input | Gate of MOSFET 1; absolute maximum gate-source voltage is ±20 V, with threshold 1.0 to 2.5 V. |
| 3 | S2 | passive | Source of MOSFET 2; the datasheet states VDS 100 V and ID 2.5 A at TA=25°C. |
| 4 | G2 | input | Gate of MOSFET 2; absolute maximum gate-source voltage is ±20 V, with threshold 1.0 to 2.5 V. |
| 5 | D2 | passive | Drain of MOSFET 2; drain-source voltage is rated 100 V and pulsed drain current 10 A. |
| 6 | D2 | passive | Drain of MOSFET 2 (second drain pin); drain-source voltage is rated 100 V and pulsed drain current 10 A. |
| 7 | D1 | passive | Drain of MOSFET 1; drain-source voltage is rated 100 V and pulsed drain current 10 A. |
| 8 | D1 | passive | Drain of MOSFET 1 (second drain pin); drain-source voltage is rated 100 V and pulsed drain current 10 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 90 | 112 | mΩ | VGS=10V, ID=2A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 95 | 120 | mΩ | VGS=4.5V, ID=1A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 10 | uA | VDS=80V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 100 | uA | VDS=80V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | 100 | nA | VGS=±20V, VDS=0V | 2 | ||
| Gate Resistance | Rg | 2 | 4 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | |
| Continuous Source Current | IS | 4 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 8 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TA=25℃ | 2.5 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TA=70℃ | 2 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 10 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 6.1 | mJ | VDD=25V, VGS=10V, L=0.1mH, IAS=11A | 1 | ||
| Avalanche Current | IAS | 11 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 1.5 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 85 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper (note 1) | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 36 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
HSM0204 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
hsm0204-etched.step/hsm0204-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsm0204.step/hsm0204.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
d4bbc082ffae7e52, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).