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HSK6113

Public Made by Adom

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HUASHUO MOSFETs, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HSK6113

HUASHUO · MOSFETs · SOT-89

HSK6113 from HUASHUO, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage rated ±20 V, with threshold VGS(th) of -1.2 V min to -2.5 V max at ID=-250uA.
2 D passive Drain, also connected to the exposed tab; drain-source voltage -60 V, continuous drain current -4 A at TA=25℃, pulsed -8.2 A.
3 S passive Source; continuous source (body diode) current -4 A and pulsed -8.2 A.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current, TA=25℃ ID@TA=25℃ -4 A VGS @ -10V 1
Continuous Drain Current, TA=70℃ ID@TA=70℃ -3 A VGS @ -10V 1
Pulsed Drain Current IDM -8.2 A 1
Single Pulse Avalanche Energy EAS 29.7 mJ 1
Avalanche Current IAS 24.4 A 1
Total Power Dissipation PD@TA=25℃ 1.8 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 85 ℃/W 1
Thermal Resistance Junction-Case RθJC 24 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 90 mΩ VGS=-10V, ID=-3A 2
Static Drain-Source On-Resistance RDS(ON) 115 mΩ VGS=-4.5V, ID=-2A 2
Gate Threshold Voltage VGS(th) -1.2 -1.6 -2.5 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=-48V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=-48V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS -4 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM -8.2 A 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 2
BVDSS Temperature Coefficient △BVDSS/△TJ -0.03 V/℃ Reference to 25℃, ID=-1mA 2
VGS(th) Temperature Coefficient △VGS(th) 4.56 mV/℃ 2
Forward Transconductance gfs 8.7 S VDS=-5V, ID=-3A 2
Gate Resistance Rg 15 VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge (-4.5V) Qg 11.8 nC VDS=-48V, VGS=-4.5V, ID=-3A 2
Gate-Source Charge Qgs 1.9 nC 2
Gate-Drain Charge Qgd 6.5 nC 2
Turn-On Delay Time Td(on) 8.8 ns VDD=-15V, VGS=-10V, RG=3.3, ID=-1A 2
Rise Time Tr 19.6 ns 2
Turn-Off Delay Time Td(off) 47.2 ns 2
Fall Time Tf 9.6 ns 2
Input Capacitance Ciss 1080 pF VDS=-15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 73 pF 2
Reverse Transfer Capacitance Crss 50 pF 2

CAD (KiCad official)

  • Symbol: HSK6113
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: hsk6113-etched.step / hsk6113-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsk6113.step / hsk6113.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 d62be65e9707996d, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF