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HSK6008

Public Made by Adom

by adom

HUASHUO MOSFETs, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HSK6008

HUASHUO · MOSFETs · SOT-89

HSK6008 from HUASHUO, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated ±20 V, with a typical threshold VGS(th) of 1.7 V (1.2 V min, 2.5 V max) at ID=250uA.
2 D passive Drain, which is also connected to the top-side tab; rated for VDS of 60 V and continuous drain current of 3.2 A at TA=25℃ (12 A pulsed).
3 S passive Source; the body diode carries continuous source current up to 3.2 A with a maximum forward voltage VSD of 1.2 V at IS=1A.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package SOT-89
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V , ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 80 100 mΩ VGS=10V , ID=2.5A 2
Static Drain-Source On-Resistance RDS(ON) 85 110 mΩ VGS=4.5V , ID=2A 2
Gate Threshold Voltage VGS(th) 1.2 1.7 2.5 V VGS=VDS , ID =250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=48V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=48V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Total Gate Charge (4.5V) Qg 5 7 nC VDS=48V , VGS=4.5V , ID=2A 2
Gate-Source Charge Qgs 1.68 2.4 nC VDS=48V , VGS=4.5V , ID=2A 2
Gate-Drain Charge Qgd 1.9 2.7 nC VDS=48V , VGS=4.5V , ID=2A 2
Turn-On Delay Time Td(on) 1.6 3.2 ns VDD=30V , VGS=10V , RG=3.3, ID=2A 2
Rise Time Tr 7.2 13 ns VDD=30V , VGS=10V , RG=3.3, ID=2A 2
Turn-Off Delay Time Td(off) 25 50 ns VDD=30V , VGS=10V , RG=3.3, ID=2A 2
Fall Time Tf 14.4 28.8 ns VDD=30V , VGS=10V , RG=3.3, ID=2A 2
Input Capacitance Ciss 511 715 pF VDS=15V , VGS=0V , f=1MHz 2
Output Capacitance Coss 38 53 pF VDS=15V , VGS=0V , f=1MHz 2
Reverse Transfer Capacitance Crss 25 35 pF VDS=15V , VGS=0V , f=1MHz 2
Continuous Source Current IS 3.2 A VG=VD=0V , Force Current 2
Pulsed Source Current ISM 12 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 2
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TA=25℃ 3.2 A VGS @ 10V 1
Continuous Drain Current ID@TA=70℃ 2.3 A VGS @ 10V 1
Pulsed Drain Current IDM 12 A 1
Total Power Dissipation PD@TA=25℃ 1.5 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 85 ℃/W 1
Thermal Resistance Junction-Case RθJC 48 ℃/W 1
BVDSS Temperature Coefficient △BVDSS/△TJ 0.054 V/℃ Reference to 25℃ , ID=1mA 2
VGS(th) Temperature Coefficient △VGS(th) -4.96 mV/℃ 2
Forward Transconductance gfs 13 S VDS=5V , ID=2A 2
Reverse Recovery Time trr 9.7 nS IF=2A , dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 5.8 nC IF=2A , dI/dt=100A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: HSK6008
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: hsk6008-etched.step / hsk6008-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsk6008.step / hsk6008.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 11ee4bf06b6e1c5d, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF