component
HSK4101
Public Made by Adomby adom
HUASHUO MOSFETs, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownHSK4101
HUASHUO · MOSFETs · SOT-89
HSK4101 from HUASHUO, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drives the P-channel MOSFET, with VGS rated ±20 V and threshold VGS(th) of -1.0 to -2.5 V at ID=-250uA. |
| 2 | D | passive | Drain (also connected to the exposed tab); VDS rated -40 V, continuous ID -5.8 A at TA=25℃ and pulsed IDM -20 A. |
| 3 | S | passive | Source; carries the continuous source current up to -5.8 A, with body diode forward voltage max -1 V at IS=-1A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -40 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TA=25℃ | -5.8 | A | VGS @ -4.5V | 1 | ||
| Continuous Drain Current | ID@TA=70℃ | -5 | A | VGS @ -4.5V | 1 | ||
| Pulsed Drain Current | IDM | -20 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 1.4 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 125 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 85 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS=0V , ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 70 | mΩ | VGS=-4.5V , ID=-3A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 100 | mΩ | VGS=-2.5V , ID=-2A | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -1.7 | -2.5 | V | VGS=VDS , ID =-250uA | 2 |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-24V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -5 | uA | VDS=-24V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Continuous Source Current | IS | -5.8 | A | VG=VD=0V , Force Current | 2 | ||
| Pulsed Source Current | ISM | -20 | A | 2 | |||
| Diode Forward Voltage | VSD | -1 | V | VGS=0V , IS=-1A , TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
HSK4101 - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
hsk4101-etched.step/hsk4101-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsk4101.step/hsk4101.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
ae13d05a41cb4657, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).