component
HSK10N06
Public Made by Adomby adom
HUASHUO MOSFETs, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| hsk10n06-etched.glb | 17d ago |
| hsk10n06-etched.step | 17d ago |
| hsk10n06-hero.glb | 17d ago |
| hsk10n06-hero.overlay.json | 17d ago |
| hsk10n06.glb | 17d ago |
| hsk10n06.kicad_mod | 17d ago |
| hsk10n06.kicad_sym | 17d ago |
| hsk10n06.lbr | 17d ago |
| hsk10n06.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
HSK10N06
HUASHUO · MOSFETs · SOT-89
HSK10N06 from HUASHUO, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20 V and threshold VGS(th) 1.1 V min to 3.0 V max at ID=250uA. |
| 2 | D | passive | Drain (middle lead, also the exposed tab); 60 V drain-source rating, 10 A continuous at TA=25℃ and 40 A pulsed. |
| 3 | S | passive | Source; continuous body-diode source current is 8 A max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 10 | A | TA=25℃, VGS @ 10V | 1 | ||
| Continuous Drain Current | ID | 8 | A | TA=70℃, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 40 | A | 1 | |||
| Avalanche Current | IAS | 21 | A | 1 | |||
| Total Power Dissipation | PD | 2 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 75 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper (note 1) | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 33 | 40 | mΩ | VGS=10V, ID=10A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 38 | 50 | mΩ | VGS=4.5V, ID=5A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.1 | 2 | 3 | V | VGS=VDS, ID=250uA | 2 |
| VGS(th) Temperature Coefficient | ΔVGS(th) | -6 | mV/℃ | 2 | |||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=48V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=48V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | 8 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 0.81 | 1.4 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
HSK10N06 - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
hsk10n06-etched.step/hsk10n06-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsk10n06.step/hsk10n06.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
38e283bbd09779e1, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).