component
HSK02N20
Public Made by Adomby adom
HUASHUO MOSFETs, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHSK02N20
HUASHUO · MOSFETs · SOT-89
HSK02N20 from HUASHUO, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage rated ±20 V, with VGS(th) of 1.2 V min to 3 V max at ID=250uA. |
| 2 | D | passive | Drain, also connected to the top tab; drain-source voltage rated 200 V and continuous current 2.0 A at TA=25℃. |
| 3 | S | passive | Source; continuous source current IS is 2 A max and body-diode forward voltage VSD is 1 V max at IS=1A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOT-89 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 200 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TA=25℃ | 2 | A | VGS @ 10V, TA=25℃ | 1 | ||
| Continuous Drain Current | ID@TA=70℃ | 1.3 | A | VGS @ 10V, TA=70℃ | 1 | ||
| Pulsed Drain Current | IDM | 8 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 1.25 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 85 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 24 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 200 | V | VGS=0V , ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 0.6 | 1 | Ω | VGS=10V , ID=1A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.7 | 1.1 | Ω | VGS=4.5V , ID=1A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 2 | 3 | V | VGS=VDS , ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=200V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=200V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Continuous Source Current | IS | 2 | A | VG=VD=0V , Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1 | V | VGS=0V , IS=1A , TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
HSK02N20 - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
hsk02n20-etched.step/hsk02n20-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsk02n20.step/hsk02n20.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (7 pp, sha256
df285c42a6003f22, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).