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HSI7850DPT1E3

Public Made by Adom

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HXY MOSFET MOSFETs, DFN5X6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HSI7850DPT1E3

HXY MOSFET · MOSFETs · DFN5X6-8L

HSI7850DPT1E3 from HXY MOSFET, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET; the datasheet's Pin 1 marker is on this corner, and VDS is rated 60V and VGS ±20V.
2 S passive Source terminal of the N-channel MOSFET, rated for VDS 60V and VGS ±20V per the absolute maximum ratings.
3 S passive Source terminal of the N-channel MOSFET, rated for VDS 60V and VGS ±20V per the absolute maximum ratings.
4 G input Gate terminal; gate-source voltage is rated ±20V per the absolute maximum ratings, and RDS(ON) is specified at VGS=4.5V and 10V.
5 D passive Drain terminal; drain-source voltage is rated 60V and continuous drain current 30A at TC=25℃ (VGS @ 10V).
6 D passive Drain terminal; drain-source voltage is rated 60V and continuous drain current 30A at TC=25℃ (VGS @ 10V).
7 D passive Drain terminal; drain-source voltage is rated 60V and continuous drain current 30A at TC=25℃ (VGS @ 10V).
8 D passive Drain terminal; drain-source voltage is rated 60V and continuous drain current 30A at TC=25℃ (VGS @ 10V).
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN5X6-8L
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 30 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 15 A VGS @ 10V 1
Pulsed Drain Current IDM 46 A 1
Single Pulse Avalanche Energy EAS 25.5 mJ Note 3: VDD=25V,VGS=10V,L=0.1mH,IAS=22.6A 1
Avalanche Current IAS 22.6 A 1
Total Power Dissipation PD@TC=25℃ 34.7 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W Note 1: surface mounted on 1 inch² FR-4 board with 2OZ copper 1
Thermal Resistance Junction-Case RθJC 3.6 ℃/W Note 1: surface mounted on 1 inch² FR-4 board with 2OZ copper 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 25 mΩ VGS=10V, ID=15A 2
Static Drain-Source On-Resistance RDS(ON) 24 mΩ VGS=4.5V, ID=10A 2
Gate Threshold Voltage VGS(th) 1.2 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=48V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=48V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS 30 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 46 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: HSI7850DPT1E3
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5X6-8L (KiCad packages3D, STEP)
  • 3D model files: hsi7850dpt1e3-etched.step / hsi7850dpt1e3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsi7850dpt1e3.step / hsi7850dpt1e3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 76b08f419acc030b, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF