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HSH100P06

HUASHUO · MOSFETs · TO-263

HSH100P06 from HUASHUO, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; the pin configuration drawing labels it G, with a gate-source voltage rating of ±20 V.
2 D passive Drain, the exposed tab, which the drawing labels D; the middle lead position is absent in the outline. Drain-source voltage is -60 V and continuous drain current is -100 A at TC=25℃.
3 S passive Source; the pin configuration drawing labels it S. Continuous source (body diode) current is -100 A.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package TO-263
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 7 8 mΩ VGS=-10V, ID=-20A 2
Static Drain-Source On-Resistance RDS(ON) 8.5 10 mΩ VGS=-4.5V, ID=-10A 2
Gate Threshold Voltage VGS(th) -1 -1.65 -2.5 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=-48V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 10 uA VDS=-48V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS -100 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM -280 A 2
Diode Forward Voltage VSD -1 V VGS=0V, IS=-1A, TJ=25℃ 2
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current (TC=25℃) ID@TC=25℃ -100 A -VGS @ -10V 1
Continuous Drain Current (TC=100℃) ID@TC=100℃ -70 A -VGS @ -10V 1
Pulsed Drain Current IDM -280 A 1
Single Pulse Avalanche Energy EAS 310 mJ 1
Avalanche Current IAS 100 A 1
Total Power Dissipation PD@TC=25℃ 210 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W 1
Thermal Resistance Junction-Case RθJC 0.71 ℃/W 1

CAD (KiCad official)

  • Symbol: HSH100P06
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: hsh100p06-etched.step / hsh100p06-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsh100p06.step / hsh100p06.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 04b6f850fd97e5f0, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF