component
HSEH0501D3
Public Made by Adomby adom
HXY MOSFET Electrostatic And Surge Protection (TVS/ESD), SOD-323. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
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HSEH0501D3
HXY MOSFET · Electrostatic And Surge Protection (TVS/ESD) · SOD-323
HSEH0501D3 from HXY MOSFET, in a SOD-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Terminal 1 of an unpolarised bidirectional ESD/TVS diode; either orientation. |
| 2 | 2 | passive | Terminal 2 of an unpolarised bidirectional ESD/TVS diode; either orientation. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOD-323 |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Breakdown Voltage | VBR | 6 | V | IT = 1mA | 2 | ||
| Reverse Working Voltage | VRWM | 5 | V | 2 | |||
| Reverse Leakage Current | IR | 0.1 | μA | VRWM = 5V | 2 | ||
| Clamping Voltage | VC | 13 | V | IPP = 1A, tp = 8/20μs | 2 | ||
| Clamping Voltage | VC | 25 | V | IPP = 4A, tp = 8/20μs | 2 | ||
| Junction Capacitance | CJ | 1 | pF | VR = 0V, f = 1MHz | 2 | ||
| Junction Capacitance | CJ | 1.2 | pF | VR = 0V, f = 1MHz | 2 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10s | 1 | ||
| Storage Temperature Range | Tstg | -55 | 155 | °C | 1 | ||
| Operating Temperature Range | Top | -40 | 125 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| IEC61000-4-2 (ESD) air discharge | -15 | 15 | kV | IEC61000-4-2 air discharge | 1 | ||
| IEC61000-4-2 (ESD) contact discharge | -8 | 8 | kV | IEC61000-4-2 contact discharge | 1 | ||
| IEC61000-4-4 (EFT) | 40 | A | IEC61000-4-4, 5/50 ns | 1 | |||
| Peak Pulse Power | PPP | 100 | W | tp = 8/20 μs | 1 |
CAD (KiCad official)
- Symbol:
HSEH0501D3 - Footprint:
Diode_SMD:D_SOD-323 - 3D model: SOD-323 (KiCad packages3D, STEP)
- 3D model files:
hseh0501d3-etched.step/hseh0501d3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hseh0501d3.step/hseh0501d3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
13fd6073d16046b9, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarytwo-terminal convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HSEH0501D3
**HXY MOSFET** · Electrostatic And Surge Protection (TVS/ESD) · SOD-323
HSEH0501D3 from HXY MOSFET, in a SOD-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Terminal 1 of an unpolarised bidirectional ESD/TVS diode; either orientation. |
| 2 | 2 | passive | Terminal 2 of an unpolarised bidirectional ESD/TVS diode; either orientation. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOD-323 |
| Category | Circuit Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Breakdown Voltage | VBR | 6 | | | V | IT = 1mA | 2 |
| Reverse Working Voltage | VRWM | | | 5 | V | | 2 |
| Reverse Leakage Current | IR | | | 0.1 | μA | VRWM = 5V | 2 |
| Clamping Voltage | VC | | | 13 | V | IPP = 1A, tp = 8/20μs | 2 |
| Clamping Voltage | VC | | | 25 | V | IPP = 4A, tp = 8/20μs | 2 |
| Junction Capacitance | CJ | | 1 | | pF | VR = 0V, f = 1MHz | 2 |
| Junction Capacitance | CJ | | | 1.2 | pF | VR = 0V, f = 1MHz | 2 |
| Maximum lead temperature for soldering | TL | | | 260 | °C | during 10s | 1 |
| Storage Temperature Range | Tstg | -55 | | 155 | °C | | 1 |
| Operating Temperature Range | Top | -40 | | 125 | °C | | 1 |
| Maximum junction temperature | Tj | | | 150 | °C | | 1 |
| IEC61000-4-2 (ESD) air discharge | | -15 | | 15 | kV | IEC61000-4-2 air discharge | 1 |
| IEC61000-4-2 (ESD) contact discharge | | -8 | | 8 | kV | IEC61000-4-2 contact discharge | 1 |
| IEC61000-4-4 (EFT) | | | | 40 | A | IEC61000-4-4, 5/50 ns | 1 |
| Peak Pulse Power | PPP | | | 100 | W | tp = 8/20 μs | 1 |
## CAD (KiCad official)
- Symbol: `HSEH0501D3`
- Footprint: `Diode_SMD:D_SOD-323`
- 3D model: SOD-323 (KiCad packages3D, STEP)
- 3D model files: `hseh0501d3-etched.step` / `hseh0501d3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hseh0501d3.step` / `hseh0501d3.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/hseh0501d3-datasheet.pdf) (5 pp, sha256 `13fd6073d16046b9`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `two-terminal convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hseh0501d3-datasheet.pdf)