Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

HSD50N10

HUAKE · MOSFETs · TO-252

HSD50N10 from HUAKE, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal, with an absolute maximum gate-source voltage of ±20 V and a threshold of 1.2 V min to 2.5 V max at 250 µA.
2 D passive Drain terminal, also connected to the metal tab, rated for 100 V drain-source voltage and 50 A continuous current at Tc=25C.
3 S passive Source terminal, with a maximum continuous body-diode forward current of 50 A.

Key specifications

Parameter Value
Manufacturer HUAKE
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 100 V 1
Drain Current - Continuous ID 50 A Tc=25C 1
Drain Current - Continuous ID 31.6 A Tc=100C 1
Drain Current - Pulsed IDM 200 A 1
Gate-Source Voltage VGSS -20 20 V 1
Single Pulsed Avalanche Energy (Limit Reference Value) EAS 74 mJ Note5: L = 0.5mH, IAS = 13A, VDD = 50V, RG = 25 Ω, Starting TJ = 25C 1
Power Dissipation PD 78 W TC = 25C 1
Power Dissipation Derating above 25°C PD 0.62 W/C above 25°C 1
Operating Junction Temperature Tj 150 C 1
Storage Temperature Range Tstg -55 150 C 1
Thermal Resistance, Junction to Case RθJC 1.6 C /W Note2: Surface Mounted on FR4 Board, t ≤ 10 sec 1
Drain-source Breakdown Voltage BVDSS 100 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V, VGS=0V 2
Gate-Body Leakage Current, Forward IGSSF 100 nA VGS=+20V, VDS=0V 2
Gate-Body Leakage Current, Reverse IGSSR -100 nA VGS=-20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.7 2.5 V VDS= VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(on) 13 17 mΩ VGS=10 V, ID=25A 2
Static Drain-Source On-Resistance RDS(on) 15 20 mΩ VGS=6 V, ID=25A 2
Maximum Continuous Drain-Source Diode Forward Current IS 50 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 200 A 2
Drain-Source Diode Forward Voltage VSD 1.3 V VGS =0V, IS=25A (Note3) 2

CAD (KiCad official)

  • Symbol: HSD50N10
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: hsd50n10-etched.step / hsd50n10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsd50n10.step / hsd50n10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUAKE datasheet (6 pp, sha256 321c44e7ffc1f733, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF