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HSCT040W65G34

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HXY MOSFET Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentsilicon carbide (sic) deviceshsct040w65g34factory-2.0.0extractor-text

Changed since verified HSCT040W65G34

by Ray · last 4 Nov 2026 · 1 record · files changed since
SymbolFootprint3D modelPins

Verification log 1 record

4 Nov 2026RayPublished by the parts factory: tier lcsc, 4 pinschanged since
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: HSCT040W65G34 · TO-247-4L · 4 pins
  • ✓copper: 4 copper pads, none touching another net
  • ✓datasheet: all 4 pin names found in the 8-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-247-4_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-6k16bvzm/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 4 pins = 4 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 4 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files! hsct040w65g34.kicad_sym✓ hsct040w65g34.kicad_mod✓ hsct040w65g34.step
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

HSCT040W65G34

HXY MOSFET · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4L

HSCT040W65G34 from HXY MOSFET, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Drain passive Drain terminal of the N-channel SiC MOSFET, also connected to the mounting tab of the TO-247-4L package.
2 Power Source passive Power source terminal of the MOSFET, carrying the main drain current return path.
3 Driver Source passive Separate driver source pin provided by the optimized package so that the gate drive return is kept apart from the power source pin.
4 Gate input Gate terminal used to switch the device; the datasheet gives gate-source limits of -5/+20 V (VGS) and -10/+25 V for dynamic absolute maximum values.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-247-4L
Category Silicon Carbide (SiC) Devices
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Operating junction and storage temperature Tj, Tstg -55 175 °C 1
Gate-Source voltage VGS -5 20 V 1
Gate-Source voltage (dynamic, absolute maximum values) VGSmax -10 25 V 1
Drain-source voltage VDS 650 V 1
Pulsed drain current ID pulse 123 A TC = 25°C, tp limited by Tjmax 1
Power dissipation Ptot 242 W TC = 25°C 1
Thermal resistance, junction to case RthJC 0.62 °C/W 1
Thermal resistance, junction to ambient RthJA 40 °C/W 1
Drain-source breakdown voltage BVDSS 650 V VGS=0V, ID=250uA 2

CAD (KiCad official)

  • Symbol: HSCT040W65G34
  • Footprint: Package_TO_SOT_THT:TO-247-4_Vertical
  • 3D model: TO-247-4L (KiCad packages3D, STEP)
  • 3D model files: hsct040w65g34-etched.step / hsct040w65g34-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsct040w65g34.step / hsct040w65g34.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (8 pp, sha256 0021991bd771e888, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF