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Contents

README

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HSCS240AE2GC11Z

HXY MOSFET · SiC Diodes · TO-247

HSCS240AE2GC11Z from HXY MOSFET, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Anode of the first Schottky diode (dual common-cathode), with the cathode tied internally to pin 2 and the case.
2 K passive Common cathode of both Schottky diodes, connected internally to the case/tab (650 V rated repetitive peak reverse voltage).
3 A2 passive Anode of the second Schottky diode (dual common-cathode), with the cathode tied internally to pin 2 and the case.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-247
Category Silicon Carbide (SiC) Devices
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive Peak Reverse Voltage VRRM 650 V 2
DC Peak Reverse Voltage VR 650 V 2
Surge Peak Reverse Voltage VRSM 650 V 2
Continuous Forward Current (first value of printed pair) IF 51 A TC = 25°C; printed as pair 51/102 2
Continuous Forward Current (second value of printed pair) IF 102 A TC = 25°C; printed as pair 51/102 2
Continuous Forward Current (first value of printed pair) IF 26 A TC = 135°C; printed as pair 26/52 2
Continuous Forward Current (second value of printed pair) IF 52 A TC = 135°C; printed as pair 26/52 2
Continuous Forward Current (first value of printed pair) IF 20 A TC = 160°C; printed as pair 20/40 2
Continuous Forward Current (second value of printed pair) IF 40 A TC = 160°C; printed as pair 20/40 2
Repetitive Peak Forward Surge Current (first value of printed pair) IFRM 102 A TC = 25°C, tp=10ms, Half Sine Pulse 2
Repetitive Peak Forward Surge Current IFRM 63 A TC = 110°C, tp=10ms, Half Sine Pulse 2
i²dt value ∫i²dt 112 A²s TC = 25°C, tp=10ms, Half Sine Pulse 2
i²dt value ∫i²dt 72 A²s TC = 110°C, tp=10ms, Half Sine Pulse 2
Non-Repetitive Forward Surge Current IFSM 150 A TC = 25°C, tp=10ms, Half Sine Pulse 2
Non-Repetitive Forward Surge Current IFSM 120 A TC = 110°C, tp=10ms, Half Sine Pulse 2
Power dissipation (first value of printed pair) Ptot 150 W TC = 25°C; printed as pair 150/300 2
Power dissipation (second value of printed pair) Ptot 300 W TC = 25°C; printed as pair 150/300 2
Power dissipation (first value of printed pair) Ptot 62 W TC = 110°C; printed as pair 62/130 2
Power dissipation (second value of printed pair) Ptot 130 W TC = 110°C; printed as pair 62/130 2
Operating junction Range Tj -55 175 °C 2
Storage temperature Range Tstg -55 150 °C 2
Forward Voltage VF 1.35 1.65 V Tj=25°C, IF=20A 3
Forward Voltage VF 1.5 1.8 V Tj=175°C, IF=20A 3
Thermal resistance, junction, case (first value of printed pair) RthJC 1 °C/W printed as pair 1.0/0.5 2
Thermal resistance, junction, case (second value of printed pair) RthJC 0.5 °C/W printed as pair 1.0/0.5 2
Total Capacitance C 1018 pF Tj=25℃, f=1MHz, VR=0V 3
Total Capacitance C 104 pF Tj=25℃, f=1MHz, VR=200V 3
Total Capacitance C 89 pF Tj=25℃, f=1MHz, VR=400V 3

CAD (KiCad official)

  • Symbol: HSCS240AE2GC11Z
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: hscs240ae2gc11z-etched.step / hscs240ae2gc11z-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hscs240ae2gc11z.step / hscs240ae2gc11z.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 7caea3a5336f03c7, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF