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HSCC2734

Public Made by Adom

by adom

HUASHUO MOSFETs, DFN-6-EP(3x2). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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HSCC2734

HUASHUO · MOSFETs · DFN-6-EP(3x2)

HSCC2734 from HUASHUO, in a DFN-6-EP(3x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1; the Pin1 marker sits at this bottom-left position in the pin configuration drawing.
2 S1 passive Source of MOSFET 1, second source pad on the same side as pin 1.
3 G1 input Gate of MOSFET 1 with embedded ESD protection; VGS rated ±12 V maximum.
4 G2 input Gate of MOSFET 2 with embedded ESD protection; VGS rated ±12 V maximum.
5 S2 passive Source of MOSFET 2.
6 S2 passive Source of MOSFET 2, second source pad on the same side.
7 D1/D2 passive Exposed pad forming the common drain of both MOSFETs (D1/D2); VDS 20 V max, ID 8 A at TA=25℃.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package DFN-6-EP(3x2)
Category Transistors/Thyristors
Pins 7

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID@TA=25℃ 8 A VGS @ 4.5V 1
Continuous Drain Current ID@TA=70℃ 6.4 A VGS @ 4.5V 1
Pulsed Drain Current IDM 50 A 1
Total Power Dissipation PD@TA=25℃ 1.56 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 80 ℃/W t ≤10s 1
Drain-Source Breakdown Voltage BVDSS 20 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 10 13 16 mΩ VGS=4.5V, ID=2A 2
Static Drain-Source On-Resistance RDS(ON) 10.5 13.5 17 mΩ VGS=4.0V, ID=2A 2
Static Drain-Source On-Resistance RDS(ON) 11 14 18 mΩ VGS=3.7V, ID=2A 2
Static Drain-Source On-Resistance RDS(ON) 12.5 16 21 mΩ VGS=3.1V, ID=2A 2
Static Drain-Source On-Resistance RDS(ON) 16.5 20.5 27.5 mΩ VGS=2.5V, ID=2A 2
Gate Threshold Voltage VGS(th) 0.5 0.6 1.2 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=16V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=16V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -10 10 uA VGS=±8V, VDS=0V 2
Continuous Source Current IS 8 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 50 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=8.0A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: HSCC2734
  • Footprint: Package_DFN_QFN:DFN-6-1EP_3x2mm_P0.5mm_EP1.65x1.35mm
  • 3D model: DFN-6-EP(3x2), generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.9 mm nominal QFN height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: hscc2734-etched.step / hscc2734-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hscc2734.step / hscc2734.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 ee62a3ae81819017, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF