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HSC1210-01ETG

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HXY MOSFET Electrostatic And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 14d ago
viewers hsc1210-01etg: symbol repaired (bidirectional TVS (the page says so)) · Ray 4d ago
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hsc1210-01etg-etched.step hsc1210-01etg: factory component page (tier=lcsc) · Ray 14d ago
hsc1210-01etg-hero.glb hsc1210-01etg: hero GLB from the etched model (keeps the MPN mark) · Ray 14d ago
hsc1210-01etg-hero.overlay.json Publish 0.1.0 · Ray 14d ago
hsc1210-01etg.glb Publish 0.1.0 · Ray 14d ago
hsc1210-01etg.kicad_mod Publish 0.1.0 · Ray 14d ago
hsc1210-01etg.kicad_sym hsc1210-01etg: symbol repaired (bidirectional TVS (the page says so)) · Ray 4d ago
hsc1210-01etg.lbr hsc1210-01etg: symbol repaired (bidirectional TVS (the page says so)) · Ray 4d ago
hsc1210-01etg.step Publish 0.1.0 · Ray 14d ago
package.json Publish 0.1.0 · Ray 14d ago
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README.md Publish 0.1.0 · Ray 14d ago

HSC1210-01ETG

HXY MOSFET · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L

HSC1210-01ETG from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1 passive Terminal 1 of the single bi-directional ESD protection diode (5V working voltage, 400W 8/20us peak pulse power, ±30kV contact/air IEC 61000-4-2); the datasheet gives no polarity, so it is interchangeable with pin 2.
2 2 passive Terminal 2 of the single bi-directional ESD protection diode (5V working voltage, 400W 8/20us peak pulse power, ±30kV contact/air IEC 61000-4-2); the datasheet gives no polarity, so it is interchangeable with pin 1.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN1006-2L
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse Working Voltage VRWM 5 V 2
Reverse Breakdown Voltage VBR 5.8 V IT = 1mA 2
Reverse Leakage Current IR 1 μA VRWM = 5.0V 2
Junction Capacitance CJ 40 50 pF VR = 0V, f = 1MHz 2
Peak Pulse Power PPP 400 W tp = 8/20μs 1
Maximum lead temperature for soldering TL 260 °C 10s 1
Storage Temperature Range Tstg -55 150 °C 1
Operating Temperature Range Top -55 150 °C 1
Maximum junction temperature Tj 150 °C 1
ESD air discharge IEC61000-4-2 -30 30 kV air discharge 1
ESD contact discharge IEC61000-4-2 -30 30 kV contact discharge 1
EFT IEC61000-4-4 40 A 5/50 ns 1

CAD (KiCad official)

  • Symbol: HSC1210-01ETG
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: hsc1210-01etg-etched.step / hsc1210-01etg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsc1210-01etg.step / hsc1210-01etg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 9da004dc07df45cf, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF