# HS1195

**HXY MOSFET** · MOSFETs · SOP-8

HS1195 from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the first P-channel MOSFET; the device is rated VDS = -30 V with continuous drain current -8.5 A. |
| 2 | G1 | input | Gate of the first P-channel MOSFET; gate-source voltage is limited to ±20 V. |
| 3 | S2 | passive | Source of the second P-channel MOSFET; the device is rated VDS = -30 V with continuous drain current -8.5 A. |
| 4 | G2 | input | Gate of the second P-channel MOSFET; gate-source voltage is limited to ±20 V. |
| 5 | D2 | passive | Drain of the second P-channel MOSFET; drain-source voltage is rated -30 V with pulsed drain current -26 A. |
| 6 | D2 | passive | Drain of the second P-channel MOSFET; drain-source voltage is rated -30 V with pulsed drain current -26 A. |
| 7 | D1 | passive | Drain of the first P-channel MOSFET; drain-source voltage is rated -30 V with pulsed drain current -26 A. |
| 8 | D1 | passive | Drain of the first P-channel MOSFET; drain-source voltage is rated -30 V with pulsed drain current -26 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 |  |  | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current-Continuous | ID | -8.5 |  |  | A |  | 1 |
| Drain Current-Pulsed | IDM | -26 |  |  | A | Note 1 | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 85 | ℃/W | Note 2 | 1 |
| Maximum Power Dissipation | PD |  |  | 1.5 | W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -30 |  |  | V | VGS=0V, ID=-250uA | 2 |
| Gate Threshold Voltage | VGS(th) | -1 |  | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | -1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS |  |  | -5 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Continuous Source Current | IS |  |  | -6.5 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM |  |  | -26 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |

## CAD (KiCad official)

- Symbol: `HS1195`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `hs1195-etched.step` / `hs1195-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hs1195.step` / `hs1195.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757877101523816448) (6 pp, sha256 `056844c7d863556b`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hs1195-datasheet.pdf)