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HRN1910LF

Public Made by Adom

by adom

HXY MOSFET Digital Transistors, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HRN1910LF

HXY MOSFET · Digital Transistors · SOT-363

HRN1910LF from HXY MOSFET, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of transistor 1 (DTC143T NPN chip); transistors are independent, VEBO max 5 V, IC max 100 mA.
2 B1 input Base of transistor 1, connected through the built-in series input resistor R1 (typ 4.7 kΩ, 3.29 to 6.11 kΩ).
3 C2 passive Collector of transistor 2; VCBO and VCEO are 50 V max, IC max 100 mA.
4 E2 passive Emitter of transistor 2 (DTC143T NPN chip); VEBO max 5 V.
5 B2 input Base of transistor 2, connected through the built-in series input resistor R1 (typ 4.7 kΩ, 3.29 to 6.11 kΩ).
6 C1 passive Collector of transistor 1; VCBO and VCEO are 50 V max, IC max 100 mA.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO 50 V Ic=50μA 1
Collector-emitter breakdown voltage V(BR)CEO 50 V Ic=1mA 1
Emitter-base breakdown voltage V(BR)EBO 5 V IE=50μA 1
Collector cut-off current ICBO 0.5 μA VCB=50V 1
Emitter cut-off current IEBO 0.5 μA VEB=4V 1
Collector-emitter saturation voltage VCE(sat) 0.3 V IC=5mA,IB=0.25mA 1
DC current transfer ratio hFE 100 600 VCE=5V,IC=1mA 1
Input resistance R1 3.29 4.7 6.11 KΩ 1
Transition frequency fT 250 MHz VCE=10V ,IE=-5mA,f=100MHz 1
Collector-base voltage V(BR)CBO 50 V Ta=25 1
Collector-emitter voltage V(BR)CEO 50 V Ta=25 1
Emitter-base voltage V(BR)EBO 5 V Ta=25 1
Collector current IC 100 mA Ta=25 1
Collector power dissipation PC 150 mW Ta=25 1
Junction temperature Tj 150 ℃ Ta=25 1
Storage temperature Tstg -55 150 ℃ Ta=25 1

CAD (KiCad official)

  • Symbol: HRN1910LF
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: hrn1910lf-etched.step / hrn1910lf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hrn1910lf.step / hrn1910lf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 c0ac51c6a1b9aad6, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF