component

HRCLAMP0551P.TST

Public Made by Adom

by adom

HXY MOSFET Electrostatic And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HRCLAMP0551P.TST

HXY MOSFET · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L

HRCLAMP0551P.TST from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1 passive One terminal of the bidirectional ESD protection diode for a single I/O line; the datasheet gives a 5 V reverse working voltage (VRWM) and ±8 kV contact / ±15 kV air IEC 61000-4-2 ESD rating for the device but does not state which pin carries which function.
2 2 passive Second terminal of the bidirectional ESD protection diode for the same I/O line; the datasheet gives 100 W peak pulse power (8/20 µs) and 40 A IEC 61000-4-4 EFT rating for the device but does not state which pin carries which function.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN1006-2L
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse Working Voltage VRWM 5 V 2
Reverse Breakdown Voltage VBR 6 V IT = 1mA 2
Reverse Leakage Current IR 0.1 μA VRWM = 5.0V 2
Clamping Voltage VC 13 V IPP = 1A, tp = 8/20μs 2
Clamping Voltage VC 25 V IPP = 4A, tp = 8/20μs 2
TLP Clamping Voltage VCTLP 26 V IPP = 8A, IEC61000-4-2 Level 2 equivalent (±4kV contact, ±8kV air) 2
TLP Clamping Voltage VCTLP 38 V IPP = 16A, IEC61000-4-2 Level 4 equivalent (±8kV contact, ±16kV air) 2
Junction Capacitance CJ 0.25 pF VR = 0V, f = 1MHz 2
Peak Pulse Power PPP 100 W tp = 8/20μs 1
Maximum Lead Temperature for Soldering TL 260 °C 10s 1
Storage Temperature Range Tstg -55 150 °C 1
Maximum Junction Temperature Tj 150 °C 1
Operating Temperature Range Top -55 150 °C 1
ESD Immunity (IEC 61000-4-2) contact discharge 8 kV IEC 61000-4-2 contact discharge 1
ESD Immunity (IEC 61000-4-2) air discharge 15 kV IEC 61000-4-2 air discharge 1
EFT Immunity (IEC 61000-4-4) 40 A IEC 61000-4-4 (EFT), 5/50 ns 1

CAD (KiCad official)

  • Symbol: HRCLAMP0551P.TST
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: hrclamp0551p-tst-etched.step / hrclamp0551p-tst-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hrclamp0551p-tst.step / hrclamp0551p-tst.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 3a73d26e24250f87, retrieved 2026-10-29, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF