component

HPESDRC2FD5VBL

Public Made by Adom

by adom

HXY MOSFET ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HPESDRC2FD5VBL

HXY MOSFET · ESD And Surge Protection (TVS/ESD) · DFN1006-2L

HPESDRC2FD5VBL from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1 passive One terminal of the bidirectional ESD protection diode for the single protected line, rated for a 5 V working voltage and IEC 61000-4-2 ESD of ±8 kV contact and ±15 kV air.
2 2 passive The other terminal of the bidirectional ESD protection diode for the single protected line, rated for a 5 V working voltage and IEC 61000-4-2 ESD of ±8 kV contact and ±15 kV air.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN1006-2L
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Peak Pulse Power (tp = 8/20 μs) PPP 100 W tp = 8/20 μs 1
Maximum lead temperature for soldering TL 260 °C during 10s 1
Storage Temperature Range Tstg -55 150 °C 1
Operating Temperature Range Top -55 150 °C 1
Maximum junction temperature Tj 150 °C 1
ESD contact discharge (IEC61000-4-2) -8 8 KV IEC61000-4-2 (ESD) contact discharge 1
ESD air discharge (IEC61000-4-2) -15 15 KV IEC61000-4-2 (ESD) air discharge 1
EFT (IEC61000-4-4) 40 A IEC61000-4-4 (EFT) 1
Reverse Working Voltage VRWM 5 V 2
Reverse Breakdown Voltage VBR 6 V IT = 1mA 2
Reverse Leakage Current IR 0.1 μA VRWM = 5.0V 2
Clamping Voltage VC 13 V IRWM = 1A, tp = 8/20 μs 2
Clamping Voltage VC 25 V IRWM = 4A, tp = 8/20 μs 2
Junction Capacitance CJ 0.5 pF VR = 0V, f = 1MHz 2
TLP Clamping Voltage VCTLP 26 V IPP = 8A, IEC61000-4-2 Level 2 equivalent (±4kV Contact, ±8kV Air) 2
TLP Clamping Voltage VCTLP 38 V IPP = 16A, IEC61000-4-2 Level 4 equivalent (±8kV Contact, ±16kV Air) 2

CAD (KiCad official)

  • Symbol: HPESDRC2FD5VBL
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: hpesdrc2fd5vbl-etched.step / hpesdrc2fd5vbl-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hpesdrc2fd5vbl.step / hpesdrc2fd5vbl.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 8072ba19f56d37b9, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF