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HPESDNC2FD5VBH

Public Made by Adom

by adom

HXY MOSFET Electrostatic And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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hpesdnc2fd5vbh-etched.glb Publish 0.1.0 · Ray 8d ago
hpesdnc2fd5vbh-etched.step hpesdnc2fd5vbh: factory component page (tier=lcsc) · Ray 8d ago
hpesdnc2fd5vbh-hero.glb hpesdnc2fd5vbh: hero GLB from the etched model (keeps the MPN mark) · Ray 8d ago
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hpesdnc2fd5vbh.step Publish 0.1.0 · Ray 8d ago
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HPESDNC2FD5VBH

HXY MOSFET · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L

HPESDNC2FD5VBH from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1 passive Terminal of the single bi-directional ESD protection diode, connected to the protected I/O line with a 5.0 V reverse working voltage and 5.8 V minimum breakdown at 1 mA; the two terminals are interchangeable.
2 2 passive Second terminal of the single bi-directional ESD protection diode, connected to ground or the return reference with a 5.0 V reverse working voltage and 5.8 V minimum breakdown at 1 mA; the two terminals are interchangeable.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN1006-2L
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse Working Voltage VRWM 5 V 2
Reverse Breakdown Voltage VBR 5.8 V IT = 1mA 2
Reverse Leakage Current IR 1 μA VRWM = 5.0V 2
Peak Pulse Power PPP 400 W tp = 8/20 μs 1
Maximum lead temperature for soldering TL 260 °C during 10s 1
Storage Temperature Range Tstg -55 150 °C 1
Operating Temperature Range Top -55 150 °C 1
Maximum junction temperature Tj 150 °C 1
IEC61000-4-2 ESD air discharge -30 30 kV IEC61000-4-2 air discharge 1
IEC61000-4-2 ESD contact discharge -30 30 kV IEC61000-4-2 contact discharge 1
IEC61000-4-4 EFT 40 A IEC61000-4-4, 5/50 ns 1

CAD (KiCad official)

  • Symbol: HPESDNC2FD5VBH
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: hpesdnc2fd5vbh-etched.step / hpesdnc2fd5vbh-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hpesdnc2fd5vbh.step / hpesdnc2fd5vbh.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 f3af6b2db6e0a8e0, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF