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HPESDNC2FD12VB

Public Made by Adom

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HXY MOSFET Electrostatic And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 14d ago
viewers hpesdnc2fd12vb: symbol repaired (bidirectional TVS (the page says so)) · Ray 5d ago
hpesdnc2fd12vb-etched.glb Publish 0.1.0 · Ray 14d ago
hpesdnc2fd12vb-etched.step hpesdnc2fd12vb: factory component page (tier=lcsc) · Ray 14d ago
hpesdnc2fd12vb-hero.glb hpesdnc2fd12vb: hero GLB from the etched model (keeps the MPN mark) · Ray 14d ago
hpesdnc2fd12vb-hero.overlay.json Publish 0.1.0 · Ray 14d ago
hpesdnc2fd12vb.glb Publish 0.1.0 · Ray 14d ago
hpesdnc2fd12vb.kicad_mod Publish 0.1.0 · Ray 14d ago
hpesdnc2fd12vb.kicad_sym hpesdnc2fd12vb: symbol repaired (bidirectional TVS (the page says so)) · Ray 5d ago
hpesdnc2fd12vb.lbr hpesdnc2fd12vb: symbol repaired (bidirectional TVS (the page says so)) · Ray 5d ago
hpesdnc2fd12vb.step Publish 0.1.0 · Ray 14d ago
package.json Publish 0.1.0 · Ray 14d ago
page.json Set visibility: public · Ray 14d ago
README.md Publish 0.1.0 · Ray 14d ago

HPESDNC2FD12VB

HXY MOSFET · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L

HPESDNC2FD12VB from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1 passive Bi-directional ESD protection line terminal (I/O line) with 12V reverse working voltage, 13.3V min breakdown at 1mA and 200nA max leakage at 12V.
2 2 passive Second terminal of the bi-directional ESD protection diode (I/O line or ground return), 12V working voltage, ±20kV contact ESD per IEC 61000-4-2.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN1006-2L
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse Breakdown Voltage VBR 13.3 V IT = 1mA 2
Reverse Working Voltage VRWM 12 V 2
Reverse Leakage Current IR 200 nA VRWM = 12V 2
Clamping Voltage VC 19 V IPP = 1A, tp = 8/20μs 2
Clamping Voltage VC 26 V IPP = 5A, tp = 8/20μs 2
Junction Capacitance CJ 10 13 pF VR = 0V, f = 1MHz 2
Peak Pulse Power PPP 150 W tp = 8/20μs 1
Maximum lead temperature for soldering TL 260 °C during 10s 1
Storage Temperature Range Tstg -55 150 °C 1
Operating Temperature Range Top -55 150 °C 1
Maximum junction temperature Tj 150 °C 1
IEC61000-4-4 (EFT) 40 A 5/50 ns 1

CAD (KiCad official)

  • Symbol: HPESDNC2FD12VB
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: hpesdnc2fd12vb-etched.step / hpesdnc2fd12vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hpesdnc2fd12vb.step / hpesdnc2fd12vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 6888728d8fb09514, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF