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HPESDHC2FD5VUH

Public Made by Adom

by adom

HXY MOSFET ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 21d ago
viewers hpesdhc2fd5vuh: viewers · Ray 21d ago
hpesdhc2fd5vuh-etched.glb Publish 0.1.0 · Ray 21d ago
hpesdhc2fd5vuh-etched.step hpesdhc2fd5vuh: factory component page (tier=lcsc) · Ray 21d ago
hpesdhc2fd5vuh-hero.glb hpesdhc2fd5vuh: hero GLB from the etched model (keeps the MPN mark) · Ray 21d ago
hpesdhc2fd5vuh-hero.overlay.json Publish 0.1.0 · Ray 21d ago
hpesdhc2fd5vuh.glb Publish 0.1.0 · Ray 21d ago
hpesdhc2fd5vuh.kicad_mod Publish 0.1.0 · Ray 21d ago
hpesdhc2fd5vuh.kicad_sym Publish 0.1.0 · Ray 21d ago
hpesdhc2fd5vuh.lbr Publish 0.1.0 · Ray 21d ago
hpesdhc2fd5vuh.step Publish 0.1.0 · Ray 21d ago
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HPESDHC2FD5VUH

HXY MOSFET · ESD And Surge Protection (TVS/ESD) · DFN1006-2L

HPESDHC2FD5VUH from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1 passive Pin 1 of the DFN1006-2L package is printed on the datasheet's package drawing, but the text does not state its function, polarity, or which line it connects to.
2 2 passive Pin 2 of the DFN1006-2L package is printed on the datasheet's package drawing, but the text does not state its function, polarity, or which line it connects to.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN1006-2L
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Peak Pulse Power PPP 300 W tp = 8/20 μs 1
Maximum lead temperature for soldering TL 260 °C 10 s 1
Storage Temperature Range Tstg -55 150 °C 1
Maximum junction temperature Tj 150 °C 1
Operating Temperature Range Top -55 150 °C 1
Reverse Breakdown Voltage VBR 6 V IT = 1mA 2
Reverse Leakage Current IR 1 μA VRWM = 5V 2
Clamping Voltage VC 25 V IRWM = 15A, tp = 8/20μs 2
Clamping Voltage VC 10 V IRWM = 5A, tp = 8/20μs 2
Junction Capacitance CJ 40 pF VR = 0V, f = 1MHz 2

CAD (KiCad official)

  • Symbol: HPESDHC2FD5VUH
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: hpesdhc2fd5vuh-etched.step / hpesdhc2fd5vuh-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hpesdhc2fd5vuh.step / hpesdhc2fd5vuh.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 dc07469a3f4f8e92, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF