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HoSRX1206-3W-1mR-1%

Milliohm · Current Sense Resistors / Shunt Resistors · 1206

HoSRX1206-3W-1mR-1% from Milliohm, in a 1206. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1 passive First welded alloy terminal of the 1 mR ±1% bare alloy current-sense resistor, rated 3W and 54.77A, non-polarized and interchangeable with the other terminal.
2 2 passive Second welded alloy terminal of the 1 mR ±1% bare alloy current-sense resistor, rated 3W and 54.77A, non-polarized and interchangeable with the other terminal.

Key specifications

Parameter Value
Manufacturer Milliohm
Package 1206
Category Resistors
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Tolerance (Accuracy Range) -1 1 % 3
Resistance Temperature Coefficient (TCR) TCR -50 50 ppm/℃ JIS-C-5201; R1 at room temp, R2 at 85°C 3
Operating temperature -55 170 ℃ 3
Rated Power 3 W 3
Rated Current 54.77 A 3
Nominal resistance R 1 mR 3
Short-time overload resistance change △R -0.5 0.5 % 5 times rated power for 5 s; JIS-C-5201 5
Bending strength resistance change △R -0.5 0.5 % 2 mm bending, at least 60 s support; AEC-Q200-005 5
Solvent resistance resistance change △R -0.5 0.5 % Isopropyl alcohol 20~25°C, 60±5 s; MIL-STD-202 Method 215 5
Solder heat resistance resistance change △R -0.5 0.5 % 260±5°C tin bath, 10±1 s; MIL-STD-202 Method 210 5
Temperature cycling resistance change △R -0.5 0.5 % 1000 cycles, -55~155°C, 30 min dwell; JESD22 Method JA-104 5
High-temperature storage resistance change △R -0.5 0.5 % 1000 h at 155°C, no power applied; MIL-STD-202 Method 108 5
Biased humidity resistance change △R -0.5 0.5 % 1000 h at 85°C, 85% RH, 10% rated power; MIL-STD-202 Method 103 5
Load life resistance change △R -0.5 0.5 % Rated current, Ta=125°C, 100% power 0.5 h off / 1.5 h on, 1000 h; MIL-STD-202 Method 108 5
Low-temperature storage resistance change △R -0.5 0.5 % -55°C, 1000 h; IEC60115-1 4.23.4 / JIS-C-5201-4.23.4 5
Mechanical shock resistance change △R -0.5 0.5 % Half-sine, 0.5 ms, 100 g, X/Y/Z; MIL-STD-202 Method 213 5
Vibration resistance change △R -0.5 0.5 % 10 to 2000 Hz within 20 min, 12 cycles per axis; MIL-STD-202 Method 204 5

CAD (KiCad official)

  • Symbol: HoSRX1206-3W-1mR-1%
  • Footprint: Resistor_SMD:R_1206_3216Metric
  • 3D model: 1206 (KiCad packages3D, STEP)
  • 3D model files: hosrx1206-3w-1mr-1-etched.step / hosrx1206-3w-1mr-1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hosrx1206-3w-1mr-1.step / hosrx1206-3w-1mr-1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Milliohm datasheet (7 pp, sha256 352057d33cddc706, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF