component
HNVH4L045N065SC1
Public Made by Adomby adom
HXY MOSFET Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHNVH4L045N065SC1
HXY MOSFET · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4L
HNVH4L045N065SC1 from HXY MOSFET, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Drain | passive | Drain terminal, shown as Pin 1 and tied to the TAB; the part is rated for a drain-source breakdown voltage BVDSS of 650 V minimum at VGS=0V, ID=250µA. |
| 2 | Power Source | passive | Power source terminal carrying the main drain current return path, separate from the driver source pin, as stated by the package feature of a separate driver source pin. |
| 3 | Driver Source | passive | Separate driver source pin that the datasheet provides for gate drive return, which it states helps reduce switching losses and minimize gate ringing. |
| 4 | Gate | input | Gate control terminal with a recommended gate-source voltage range of -5/+20 V and a dynamic absolute maximum of -10/+25 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-247-4L |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 650 | V | 1 | |||
| Continuous drain current | ID | 97 | A | TC = 25°C | 1 | ||
| Continuous drain current | ID | 69 | A | TC = 100°C | 1 | ||
| Pulsed drain current | ID pulse | 241 | A | TC = 25°C, tp limited by Tjmax | 1 | ||
| Gate-Source voltage | VGS | -5 | 20 | V | 1 | ||
| Gate-Source voltage (dynamic, absolute maximum values) | VGSmax | -10 | 25 | V | 1 | ||
| Power dissipation | Ptot | 429 | W | TC = 25°C | 1 | ||
| Avalanche energy, single pulse | EAS | 1620 | mJ | L=10mH | 1 | ||
| Operating junction and storage temperature | Tj, Tstg | -55 | 175 | °C | 1 | ||
| Drain-source breakdown voltage | BVDSS | 650 | V | VGS=0V, ID=250uA | 2 |
CAD (KiCad official)
- Symbol:
HNVH4L045N065SC1 - Footprint:
Package_TO_SOT_THT:TO-247-4_Vertical - 3D model: TO-247-4L (KiCad packages3D, STEP)
- 3D model files:
hnvh4l045n065sc1-etched.step/hnvh4l045n065sc1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hnvh4l045n065sc1.step/hnvh4l045n065sc1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (8 pp, sha256
882f07163e759d24, retrieved 2026-11-04, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).