component
HNTMFS4C06N
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN5X6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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HNTMFS4C06N
HXY MOSFET · MOSFETs · DFN5X6-8L
HNTMFS4C06N from HXY MOSFET, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET (VDS rated 30V, continuous drain current 120A at TC=25°C). |
| 2 | S | passive | Source terminal of the N-channel MOSFET, paralleled with the other source pins for the 120A continuous current rating. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, paralleled with the other source pins for the 120A continuous current rating. |
| 4 | G | input | Gate terminal of the N-channel MOSFET, rated ±20V gate-source with a threshold of 1V to 2.5V at 250µA. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET (VDS 30V, pulsed drain current 360A). |
| 6 | D | passive | Drain terminal of the N-channel MOSFET, paralleled with the other drain pins (VDS 30V, pulsed drain current 360A). |
| 7 | D | passive | Drain terminal of the N-channel MOSFET, paralleled with the other drain pins (VDS 30V, pulsed drain current 360A). |
| 8 | D | passive | Drain terminal of the N-channel MOSFET, paralleled with the other drain pins (VDS 30V, pulsed drain current 360A). |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5X6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
CAD (KiCad official)
- Symbol:
HNTMFS4C06N - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5X6-8L (KiCad packages3D, STEP)
- 3D model files:
hntmfs4c06n-etched.step/hntmfs4c06n-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hntmfs4c06n.step/hntmfs4c06n.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
30bf640f791ca334, retrieved 2026-11-02, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HNTMFS4C06N
**HXY MOSFET** · MOSFETs · DFN5X6-8L
HNTMFS4C06N from HXY MOSFET, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET (VDS rated 30V, continuous drain current 120A at TC=25°C). |
| 2 | S | passive | Source terminal of the N-channel MOSFET, paralleled with the other source pins for the 120A continuous current rating. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, paralleled with the other source pins for the 120A continuous current rating. |
| 4 | G | input | Gate terminal of the N-channel MOSFET, rated ±20V gate-source with a threshold of 1V to 2.5V at 250µA. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET (VDS 30V, pulsed drain current 360A). |
| 6 | D | passive | Drain terminal of the N-channel MOSFET, paralleled with the other drain pins (VDS 30V, pulsed drain current 360A). |
| 7 | D | passive | Drain terminal of the N-channel MOSFET, paralleled with the other drain pins (VDS 30V, pulsed drain current 360A). |
| 8 | D | passive | Drain terminal of the N-channel MOSFET, paralleled with the other drain pins (VDS 30V, pulsed drain current 360A). |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5X6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
## CAD (KiCad official)
- Symbol: `HNTMFS4C06N`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5X6-8L (KiCad packages3D, STEP)
- 3D model files: `hntmfs4c06n-etched.step` / `hntmfs4c06n-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hntmfs4c06n.step` / `hntmfs4c06n.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/hntmfs4c06n-datasheet.pdf) (6 pp, sha256 `30bf640f791ca334`, retrieved 2026-11-02, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hntmfs4c06n-datasheet.pdf)