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HNTH4L040N120SC1

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HXY MOSFET Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentsilicon carbide (sic) deviceshnth4l040n120sc1factory-2.0.0extractor-text

Changed since verified HNTH4L040N120SC1

by Ray · last 4 Nov 2026 · 1 record · files changed since
SymbolFootprint3D modelPins

Verification log 1 record

4 Nov 2026RayPublished by the parts factory: tier lcsc, 4 pinschanged since
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: HNTH4L040N120SC1 · TO-247-4L · 4 pins
  • ✓copper: 4 copper pads, none touching another net
  • ✓datasheet: all 4 pin names found in the 9-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-247-4_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-paf7tpbf/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 4 pins = 4 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 4 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files! hnth4l040n120sc1.kicad_sym✓ hnth4l040n120sc1.kicad_mod✓ hnth4l040n120sc1.step
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3D Model

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Symbol & Footprint

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Contents

README

markdown

HNTH4L040N120SC1

HXY MOSFET · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4L

HNTH4L040N120SC1 from HXY MOSFET, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Drain passive Drain terminal, labelled as the TAB pin on the datasheet; the device is rated VDSmax 1200 V at VGS = 0 V, ID = 100 µA.
2 Power Source passive Power source terminal of the main drain-source current path, separate from the driver source on pin 3 as stated in the package feature list.
3 Driver Source passive Separate driver source pin provided by the optimized package; the datasheet gives gate-source limits of -5/+20 V static and -10/+25 V dynamic (AC, f >1 Hz).
4 Gate input Gate input; the datasheet gives VGSop -5/+20 V static and VGSmax -10/+25 V dynamic (AC, f >1 Hz).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-247-4L
Category Silicon Carbide (SiC) Devices
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSmax 1200 V VGS = 0 V, ID = 100 μA 1
Gate-Source Voltage (dynamic) VGSmax -10 25 V AC (f >1 Hz) 1
Gate-Source Voltage (static) VGSop -5 20 V Static 1
Continuous Drain Current ID 78 A VGS = 15 V, TC = 25˚C 1
Continuous Drain Current ID 57 A VGS = 15 V, TC = 100˚C 1
Power Dissipation PD 405 W TC =25˚C, TJ = 175 ˚C 1
Operating Junction and Storage Temperature TJ, Tstg -40 175 ˚C 1
Solder Temperature TL 260 ˚C 1.6mm (0.063”) from case for 10s 1
Gate Threshold Voltage VGS(th) 2 2.5 4 V VDS = VGS, ID = 10 mA 2
Zero Gate Voltage Drain Current IDSS 1 50 μA VDS = 1200 V, VGS = 0 V 2
Gate-Source Leakage Current IGSS 10 200 nA VGS = 20 V, V DS = 0 V 2
Gate-Source Leakage Current (reverse bias) IGSS -200 -10 nA VGS = -10 V, VDS = 0 V 2
Drain-Source On-State Resistance RDS(on) 40 50 mΩ VGS = 20 V, ID = 40 A 2
Thermal Resistance from Junction to Case RθJC 0.25 °C/W Fig. 21 2
Thermal Resistance From Junction to Ambient RθJA 40 °C/W 2

CAD (KiCad official)

  • Symbol: HNTH4L040N120SC1
  • Footprint: Package_TO_SOT_THT:TO-247-4_Vertical
  • 3D model: TO-247-4L (KiCad packages3D, STEP)
  • 3D model files: hnth4l040n120sc1-etched.step / hnth4l040n120sc1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hnth4l040n120sc1.step / hnth4l040n120sc1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (9 pp, sha256 7b97eb58625bba71, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF