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Ray Publish 0.1.0 d26c788 28d ago

HMMBTA06LT1G

HXY MOSFET · Bipolar (BJT) · SOT-23

HMMBTA06LT1G from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; Emitter-Base voltage limit is 4 V (VEBO) and V(BR)EBO is 4 V min at IE=0.1 mA.
2 E passive Emitter of the NPN transistor; Collector current is rated up to 500 mA (IC) and total power dissipation 300 mW.
3 C passive Collector of the NPN transistor; VCBO and VCEO are rated at 80 V and collector current up to 500 mA.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: HMMBTA06LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: hmmbta06lt1g-etched.step / hmmbta06lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hmmbta06lt1g.step / hmmbta06lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 72c0ff873115ed30, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF