component
HMMBT5551T
Public Made by Adomby adom
HXY MOSFET Bipolar (BJT), SOT-523. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 24d ago |
| viewers | 24d ago |
| hmmbt5551t-etched.glb | 17d ago |
| hmmbt5551t-etched.step | 17d ago |
| hmmbt5551t-hero.glb | 17d ago |
| hmmbt5551t-hero.overlay.json | 17d ago |
| hmmbt5551t.glb | 17d ago |
| hmmbt5551t.kicad_mod | 24d ago |
| hmmbt5551t.kicad_sym | 24d ago |
| hmmbt5551t.lbr | 24d ago |
| hmmbt5551t.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 24d ago |
HMMBT5551T
HXY MOSFET · Bipolar (BJT) · SOT-523
HMMBT5551T from HXY MOSFET, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor; the datasheet characterizes saturation at IB=1mA for IC=10mA and at IB=5mA for IC=50mA. |
| 2 | EMITTER | passive | Emitter terminal of the NPN transistor (printed as "EMTTER" in the datasheet); the maximum emitter-base voltage VEBO is 6 V. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN transistor; the datasheet gives a maximum collector-emitter voltage VCEO of 160 V and a collector current IC of 600 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-523 |
| Category | Transistors/Thyristors |
| Pins | 3 |
CAD (KiCad official)
- Symbol:
HMMBT5551T - Footprint:
Package_TO_SOT_SMD:SOT-523 - 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
hmmbt5551t-etched.step/hmmbt5551t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hmmbt5551t.step/hmmbt5551t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
8a4577642487d119, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).