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HMMBT3904WT1G

Public Made by Adom

by adom

HXY MOSFET Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HMMBT3904WT1G

HXY MOSFET · Bipolar (BJT) · SOT-323

HMMBT3904WT1G from HXY MOSFET, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base; drive terminal of the NPN transistor, with VEBO max 5 V and IC=200 mA max collector current controlled through it.
2 E passive Emitter of the NPN transistor; emitter-base voltage VEBO rating is 5 V.
3 C passive Collector of the NPN transistor; VCEO=40 V, VCBO=60 V, continuous IC=200 mA maximum.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector - Base Voltage VCBO 60 V 1
Collector - Emitter Voltage VCEO 40 V 1
Emitter - Base Voltage VEBO 5 V 1
Collector Current - Continuous IC 200 mA 1
Collector Power Dissipation PC 200 mW Ta=25 (unless otherwise noted) 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature Range Tstg -55 150 ℃ 1
Thermal Resistance From Junction To Ambient RΘJA 625 ℃/W 1
Collector-base breakdown voltage VCBO 60 V Ic= 100 μA, IE= 0 1
Collector-emitter breakdown voltage VCEO 40 V Ic= 1 mA, IB= 0 1
Emitter-base breakdown voltage VEBO 5 V IE= 100μA, IC= 0 1
Collector-base cut-off current ICBO 60 nA VCB= 60 V, IE= 0 1
Collector-emitter cut-off current ICEO 700 nA VCE= 40 V, IE= 0 1
Collector-emitter cut-off current ICEX 50 nA VCE= 30 V, VBE(off)= 3V 1
Emitter cut-off current IEBO 100 nA VEB= 5V, IC=0 1
Collector-emitter saturation voltage VCE(sat) 0.25 V IC=10 mA, IB=1 mA 1
Collector-emitter saturation voltage VCE(sat) 0.3 V IC=50 mA, IB=5 mA 1
Base-emitter saturation voltage VBE(sat) 0.85 V IC=10 mA, IB=1 mA 1
Base-emitter saturation voltage VBE(sat) 0.95 V IC=50 mA, IB=5 mA 1
DC current gain hFE(1) hFE(1) 40 VCE= 1V, IC= 100 uA 1
DC current gain hFE(2) hFE(2) 70 VCE= 1V, IC= 1 mA 1
DC current gain hFE(3) hFE(3) 100 300 VCE= 1V, IC= 10 mA 1
DC current gain hFE(4) hFE(4) 60 VCE= 1V, IC= 50 mA 1
Delay time td 35 nS VCC=3V, VBE(off)=0.5V, IC=10mA, IB1=1mA 1
Rise time tr 35 nS VCC=3V, VBE(off)=0.5V, IC=10mA, IB1=1mA 1
Storage time ts 225 nS VCC=3V, IC=10mA, IB1=IB2=1mA 1
Fall time tf 75 nS VCC=3V, IC=10mA, IB1=IB2=1mA 1
Collector input capacitance Cib 8 pF VEB= 0.5V, IE= 0, f=1MHz 1
Collector output capacitance Cob 4 pF VCB= 5V, IE= 0, f=1MHz 1
Transition frequency fT 300 MHz VCE= 20V, IC= 10mA, f=100MHz 1

CAD (KiCad official)

  • Symbol: HMMBT3904WT1G
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: hmmbt3904wt1g-etched.step / hmmbt3904wt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hmmbt3904wt1g.step / hmmbt3904wt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 b8b65371a21fb030, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF